Forming carbon nanotube capacitors

Abstract

A capacitor may be formed of carbon nanotubes. Carbon nanotubes, grown on substrates, may be formed in a desired pattern. The pattern may be defined by placing catalyst in appropriate locations for carbon nanotube growth from a substrate. Then, intermeshing arrays of carbon nanotubes may be formed by juxtaposing the carbon nanotubes formed on opposed substrates. In some embodiments, the carbon nanotubes may be covered by a dielectric which may be adhered by functionalizing the carbon nanotubes.

1 . A method comprising:
 forming carbon nanotubes on a first and second substrate; and   intermeshing said nanotubes on the two substrates.   
   
   
       2 . The method of  claim 1  including providing a catalyst at localized areas on said first and second substrates for nanotube growth. 
   
   
       3 . The method of  claim 2  including patterning and etching a catalyst on a substrate to define locations for nanotube growth. 
   
   
       4 . The method of  claim 3  including growing nanotubes on said catalyst locations. 
   
   
       5 . The method of  claim 4  including growing said carbon nanotubes at a temperature less than 350° C. 
   
   
       6 . The method of  claim 1  including covering said carbon nanotubes with a dielectric. 
   
   
       7 . The method of  claim 6  including depositing a dielectric on said nanotubes. 
   
   
       8 . The method of  claim 6  including functionalizing said nanotubes and adhering a dielectric to said functionalized nanotubes. 
   
   
       9 . The method of  claim 1  including forming an array of carbon nanotubes extending transversely away from a semiconductor substrate. 
   
   
       10 . The method of  claim 1  including forming a carbon nanotube capacitor having a capacitance density of greater than 1 microFarad per square centimeter.