US2008315170A1PendingUtilityA1

Quantum coherent switch utilizing commensurate nanoelectrode and charge density periodicities

Assignee: SAMSUNG ELECTRONICS CO LTDPriority: Jul 8, 2003Filed: Jul 2, 2008Published: Dec 25, 2008
Est. expiryJul 8, 2023(expired)· nominal 20-yr term from priority
B82Y 10/00H10D 62/8181H10D 48/385H10D 62/80H10N 70/151
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Claims

Abstract

A quantum coherent switch having a substrate formed from a density wave (DW) material capable of having a periodic electron density modulation or spin density modulation, a dielectric layer formed onto a surface of the substrate that is orthogonal to an intrinsic wave vector of the DW material; and structure for applying an external spatially periodic electrostatic potential over the dielectric layer.

Claims

exact text as granted — not AI-modified
1 . A quantum coherent switch comprising:
 a substrate formed from a density wave (DW) material capable of having a periodic electron density modulation or spin density modulation;   a dielectric layer on a surface of the substrate and   means for applying an external spatially periodic electrostatic potential over the dielectric layer.   
     
     
         2 . The quantum coherent switch of  claim 1 , where the DW material is a spin density wave material. 
     
     
         3 . The quantum coherent switch of  claim 1 , where the means for applying an external electrostatic potential is an electrode structure applied to the dielectric layer. 
     
     
         4 . The quantum coherent switch of  claim 3 , where the electrode structure is pairs of interleaved positive and negative electrodes. 
     
     
         5 . The quantum coherent switch of  claim 1 , where the spatially periodic electrostatic potential has a periodicity that is an integral multiple of the periodic electron density modulation of the DW material.

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