Laser transfer articles and method of making
Abstract
The present invention is directed to methods for transferring pre-formed electronic devices, such as transistors, resistors, capacitors, diodes, semiconductors, inductors, conductors, and dielectrics, and segments of materials, such as magnetic materials and crystalline materials onto a variety of receiving substrates using energetic beam transfer methods. Also provided is a consumable intermediate comprising a transfer substrate and a transfer material coated thereon, wherein the transfer material may be comprised of pre-formed electronic devices or magnetic materials and crystalline materials that may be transferred to a variety of receiving substrates. Aspects of the present invention may also be used to form multi-device electronic components such as sensor devices, electro-optical devices, communications devices, transmit-receive modules, and phased arrays using the consumable intermediates and transfer methods described herein.
Claims
exact text as granted — not AI-modified1 . A composite transfer sheet for use in a transfer process to transfer one or more components from the composite transfer sheet to a receiving substrate, wherein said composite transfer sheet is designed to be a consumable intermediate in a transfer process, wherein said composite transfer sheet comprises:
a transfer substrate; one or more dynamic release layers coated onto one surface of the transfer substrate; and a transfer material located on the dynamic release layer, wherein the transfer material comprises one or more components selected from the group consisting of pre-formed electronic devices, transistors, resistors, capacitors, diodes, semiconductors, inductors, conductors, dielectrics, segments of magnetic materials, segments of crystalline materials, and combinations thereof.
2 . The composite transfer sheet of claim 1 , wherein the transfer substrate is a transparent material.
3 . The composite transfer sheet of claim 1 , wherein the transfer substrate is a polyimide ribbon film.
4 . The composite transfer sheet of claim 1 , wherein the one or more dynamic release layers comprises a material selected from the group consisting of organic materials, thin metal films, metal oxides, metal sulfides, polymers, metal alloys, and mixtures thereof.
5 . The composite transfer sheet of claim 1 , wherein the one or more dynamic release layers comprises a metal selected from the group consisting of metal phthalocyanines, metal dithiolenes, metal anthraquinones, a metal of Groups Ib, IIb, IIIa, IVa, IVb, Va, Vb, VIIa, VIIb, VIIb or VIII of the Periodic Table, alloys of said metals, oxides of said metals, sulfides of said metals, and mixtures thereof.
6 . The composite transfer sheet of claim 1 , wherein the one or more dynamic release layers comprises a material selected from the group consisting of polythiophene, polyaniline, polyacetylene, polyphenylene, polyphenylene sulfide, polypyrrole, derivatives thereof, and mixtures thereof.
7 . The composite transfer sheet of claim 1 , wherein the transfer material has a thickness of about 0.1 nanometer to about 1 millimeter.
8 . The composite transfer sheet of claim 1 , wherein the transfer material is a semiconductor wafer.
9 . The composite transfer sheet of claim 8 , wherein the semiconductor wafer comprises a material selected from the group consisting of silicon, silicon germanium, germanium, gallium arsenide, gallium phosphide, gallium antimonide, gallium nitride, indium phosphide, indium arsenide, indium antimonide, silicon carbide, silicon-on-insulator, sapphire, quartz, glass, ZnO, and combinations thereof.
10 . The composite transfer sheet of claim 1 , wherein the transfer material is attached to the one or more dynamic release layer by an adhesive.
11 . A composite transfer sheet for use in a transfer process to transfer one or more devices from the composite transfer sheet to a receiving substrate, wherein the composite transfer sheet is designed to be a consumable intermediate in a transfer process, wherein the composite transfer sheet comprises:
a transfer substrate; at least one adhesive coating on one surface of the transfer substrate; and a transfer material located on the adhesive, wherein the transfer material comprises one or more components selected from the group consisting of pre-formed electronic devices, transistors, resistors, capacitors, diodes, semiconductors, inductors, conductors, dielectrics, segments of magnetic materials, segments of crystalline materials, and combinations thereof.
12 . The composite transfer sheet of claim 11 , wherein the laser transfer substrate is a transparent material.
13 . The composite transfer sheet of claim 11 , wherein the laser transfer substrate is a polyimide ribbon film.
14 . The composite transfer sheet of claim 11 , wherein the transfer material has a thickness of about 0.1 nanometer to about 1 millimeter.
15 . The composite transfer sheet of claim 11 , wherein the transfer material is a semiconductor wafer.
16 . The composite transfer sheet of claim 15 wherein the semiconductor wafer comprises a material selected from the group consisting of silicon, silicon germanium, germanium, gallium arsenide, gallium phosphide, gallium antimonide, gallium nitride, indium phosphide, indium arsenide, indium antimonide, silicon carbide, silicon-on-insulator, sapphire, quartz, glass, ZnO, and combinations thereof.Join the waitlist — get patent alerts
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