US2009000549A1PendingUtilityA1

Substrate processing method and apparatus

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Assignee: WANG XINMINGPriority: Jun 27, 2003Filed: Jun 30, 2008Published: Jan 1, 2009
Est. expiryJun 27, 2023(expired)· nominal 20-yr term from priority
H10P 74/203H10P 74/23H10P 14/46H10W 46/507H10W 20/0526H10W 20/044H10W 20/037C23C 18/1675C23C 18/1879C23C 18/1608C23C 18/1692
51
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Claims

Abstract

There is provided a substrate processing method and apparatus which can measure and monitor thickness and/or properties of a film formed on a substrate as needed, and quickly correct a deviation in process conditions, and which can therefore stably provide a product of constant quality. A substrate processing method for processing a substrate having a metal and an insulating material exposed on its surface in such a manner that a film thickness of the metal, with an exposed surface of the metal as a reference plane, is selectively or preferentially changed, including measuring a change in the film thickness and/or a film property of the metal during and/or immediately after processing, and monitoring processing and adjusting processing conditions based on results of this measurement.

Claims

exact text as granted — not AI-modified
1 - 18 . (canceled) 
   
   
       19 . A substrate processing apparatus comprising:
 a plating unit for plating a substrate with a metal and an insulating material exposed on its surface in such a manner that a coating film is formed selectively on the exposed surface of the metal;   a sensor for measuring the film thickness and/or a film property of the coating film during and/or immediately after formation of the coating film; and   a control section for controlling the plating unit based on an output from the sensor.   
   
   
       20 - 21 . (canceled)

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