Ceramic Thin Film On Various Substrates, and Process for Producing Same

Abstract

The process of Polymer Assisted Chemical Vapor Deposition (PACVD) and the semiconductor, dielectric, passivating or protecting thin films produced by the process are described. A semiconductor thin film of amorphous silicon carbide is obtained through vapor deposition following desublimation of pyrolysis products of polymeric precursors in inert or active atmosphere. PA-CVD allows one or multi-layers compositions, microstructures and thicknesses to be deposited on a wide variety of substrates. The deposited thin film from desublimation is an n-type semiconductor with a low donor concentration in the range of 10 14 -10 17 cm −3 . Many devices can be fabricated by the PA-CVD method of the invention such as; solar cells; light-emitting diodes; transistors; photothyristors, as well as integrated monolithic devices on a single chip. Using this novel technique, high deposition rates can be obtained from chemically synchronized Si—C bonds redistribution in organo-polysilanes in the temperature range of about 200-450° C.

1 - 17 . (canceled) 
   
   
       18 . A ceramic thin film deposited on a substrate comprising chains from a polymeric source that have been deposited on the substrate and chemically rearranged and annealed wherein the film is essentially free of defects. 
   
   
       19 . The film according to  claim 18 , wherein the polymeric source is a silicon-based polymer. 
   
   
       20 . The film according to  claim 18 , wherein the polymeric source is a boron nitride polymer. 
   
   
       21 . The film according to  claim 18 , wherein the polymeric source is a carbon nitride polymer. 
   
   
       22 . The film according to  claim 18 , wherein the polymeric source comprises Si, C, N or O substituents. 
   
   
       23 . The film according to  claim 18 , wherein the film has a thickness of at least 100 Å. 
   
   
       24 . The film according to  claim 18 , wherein the film in a singular or multiple layer includes a donor concentration of less than 10 15  cm −3  in a depletion zone next to the substrate prior to doping. 
   
   
       25 . A semiconductor device comprising the film according to  claim 18 . 
   
   
       26 . The semiconductor device according to  claim 25 , wherein the device is a p-type or an n-type. 
   
   
       27 . The semiconductor device according to  claim 25 , wherein the device is selected from the group consisting of a solar cell, light-emitting diode, Schottky diode, a transistor, a photothyristor and an integrated monolithic device on a single chip. 
   
   
       28 . (canceled) 
   
   
       29 . The film according to  claim 18 , wherein the polymeric source is transported through a gas inlet by the gaseous atmosphere. 
   
   
       30 - 31 . (canceled)