Binary alloy single-crystalline metal nanostructures and fabrication method thereof

Abstract

Disclosed are a method of fabricating a binary alloy nanostructure by using metal oxides, metal substances or metal halides of metal elements used to form a binary alloy and/or binary alloy substances as a precursor through a vapor phase synthesis method and a binary alloy nanostructure fabricated by the same. More particularly, the present invention provides a method of fabricating a binary alloy nanowire or nanobelt which comprises placing a precursor on the front part of a reaction furnace and a substrate on the rear part of the furnace, and heat treating both of them under inert gas atmosphere to produce the nanowire or nanobelt and, in addition, a binary alloy nanowire or nanobelt fabricated by the method according to the present invention.

1 . A method of fabricating a binary alloy single-crystalline metal nanostructure, comprising:
 using two substances selected from a first material to a third material separately or in a combination thereof as a precursor; and   heat treating the precursor as well as a semiconductor or insulator single-crystalline substrate under inert atmosphere after placing the precursor on front part of a reaction furnace and the single-crystalline substrate on rear part of the reaction furnace to fabricate a binary alloy single-crystalline metal nanowire or nanobelt,   wherein the binary alloy for the nanostructure includes the first material containing metal oxides, metal substances or metal halides of a metal used to form the binary alloy, a second material containing metal oxides, metal substances or metal halides of another metal used to form the binary alloy, and/or the third material containing any one of binary alloy substances for the binary alloy.   
   
   
       2 . The method according to  claim 1 , wherein the precursor includes a mixture of the first material and the second material, a mixture of the first material and the third material, or the third material alone. 
   
   
       3 . The method according to  claim 1 , wherein metal halides of the first material or the second material are selected from a group consisting of metal fluoride, metal chloride, metal bromide and metal iodide. 
   
   
       4 . The method according to  claim 1 , wherein the inert gas flow is introduced through the front part to the rear part of the furnace at 10 to 600 sccm. 
   
   
       5 . The method according to  claim 1 , wherein heat treatment is conducted under pressure ranging from 2 to 30 torr. 
   
   
       6 . The method according to  claim 1 , wherein the precursor is maintained at 500 to 1200° C. while the single-crystalline substrate is maintained at 700 to 1100° C. 
   
   
       7 . The method according to  claim 1 , wherein the precursor is maintained at 500 to 1200° C. while the single-crystalline substrate is maintained at 100 to 200° C. 
   
   
       8 . The method according to  claim 1 , wherein the precursor is a mixture containing metal halides of the first material as well as the second material, and metal halides of the first material and the second material are physically separate from each other and positioned at the front part of the reaction furnace. 
   
   
       9 . The method according to  claim 1 , wherein metal halides of the first material are maintained at 500 to 800° C. and the second material is maintained at 800 to 1200° C., while the single-crystalline substrate is maintained at 700 to 1100° C. 
   
   
       10 . The method according to  claim 1 , wherein metal oxides of the first material or the second material are selected from a group consisting of silver oxide, gold oxide, cobalt oxide, palladium oxide and tellurium oxide. 
   
   
       11 . The method according to  claim 1 , wherein metal substances of the first material or the second material are selected from a group consisting of silver, gold, cobalt, palladium and tellurium in terms of metal element. 
   
   
       12 . The method according to  claim 1 , wherein metal halides of the first material or the second material are selected from a group consisting of silver halide, gold halide, cobalt halide, palladium halide and tellurium halide. 
   
   
       13 . The method according to  claim 1 , wherein binary alloy substances of the third material include Pd and Au alloy, Co and Ag alloy, Ag and Te alloy, or Bi and Te alloy. 
   
   
       14 . The method according to  claim 1 , wherein the binary alloy single-crystalline metal nanowire formed on the single-crystalline substrate is selected from a Pd x Au 1-x  (0.01≦x≦0.99) single-crystalline metal nanowire, a Co y Ag 1-y  (0.01≦x≦0.5) single-crystalline metal nanowire, a Ag 2 Te single-crystalline metal nanowire and a Bi 1 Te 1  single-crystalline metal nanobelt. 
   
   
       15 . A binary alloy nanostructure comprising a solid solution of single crystals of two metal elements or a compound of the single crystals, in which the metal elements are selected from metals and metalloids, wherein the structure is fabricated by using a precursor under a catalyst through a vapor phase synthesis method. 
   
   
       16 . The nanostructure according to  claim 15 , wherein the precursor includes two substances selected from a first material to a third material separately or in a combination thereof, and the binary alloy for the nanostructure includes the first material containing metal oxides, metal substances or metal halides of a metal used to form the binary alloy, a second material containing metal oxides, metal substances or metal halides of another metal used to form the binary alloy, or the third material containing any one of binary alloy substances for the binary alloy. 
   
   
       17 . The nanostructure according to  claim 15 , wherein the vapor phase synthesis method is heat treatment characterized in that the precursor is maintained at 500 to 1200° C. while a substrate for fabrication of a binary alloy single-crystalline metal nanowire is maintained at 700 to 1100° C., and an inert gas flow is introduced from the precursor to the substrate at 10 to 600 sccm under pressure ranging from 2 to 30 torr. 
   
   
       18 . The nanostructure according to  claim 15 , wherein the vapor phase synthesis method is heat treatment characterized in that the precursor is maintained at 500 to 1200° C. while a substrate for fabrication of a binary alloy single-crystalline metal nanobelt is maintained at 100 to 200° C., and an inert gas flow is introduced from the precursor to the substrate at 10 to 600 sccm under pressure ranging from 2 to 30 torr. 
   
   
       19 . The nanostructure according to  claim 16 , wherein the binary alloy nanowire is selected from a Pd x Au 1-x  (0.01≦x≦0.99) single-crystalline metal nanowire, a Co y Ag 1-y  (0.01≦x≦0.5) single-crystalline metal nanowire, a Ag 2 Te nanowire and a Bi 1 Te 1  single-crystalline metal nanobelt. 
   
   
       20 . The nanostructure according to  claim 19 , wherein the Pd x Au 1-x  (0.01≦x≦0.99) single-crystalline metal nanowire has a FCC (Face Centered Cubic) structure. 
   
   
       21 . The nanostructure according to  claim 20 , wherein the Pd x Au 1-x  (0.01≦x≦0.99) single-crystalline metal nanowire is in the form of a solid solution. 
   
   
       22 . The nanostructure according to  claim 19 , wherein the Co y Ag 1-y  (0.01≦x≦0.5) single-crystalline metal nanowire has a FCC (Face Centered Cubic) structure. 
   
   
       23 . The nanostructure according to  claim 22 , wherein the Co y Ag 1-y  (0.01≦x≦0.5) single-crystalline metal nanowire is in the form of a solid solution. 
   
   
       24 . The nanostructure according to  claim 19 , wherein the Ag 2 Te single-crystalline metal nanowire has an SM (Simple Monoclinic) structure. 
   
   
       25 . The nanostructure according to  claim 24 , wherein the Ag 2 Te single-crystalline metal nanowire is in the form of a compound. 
   
   
       26 . The nanostructure according to  claim 19 , wherein the Bi 1 Te 1  single-crystalline metal nanobelt has a hexagonal structure.