Selective polish for fabricating electronic devices

Abstract

A selective polish for fabricating electronic devices is disclosed. The selective polish may include the use of a slurry that facilitates the selective polish of a first component but does not substantially polish a second component.

1 . A polish composition, comprising:
 a slurry; and   a benzyltrimethylammonium hydroxide (BTMAH) additive to provide the slurry with a poly/oxide selectivity equal to or greater than 5 to 1 (5:1).   
   
   
       2 . The polish composition of  claim 1 , wherein the additive provides the slurry with a poly/oxide selectivity greater than or equal to 50 to 1 (50:1). 
   
   
       3 . The polish composition of  claim 1 , further comprising:
 another additive selected from the group consisting of tetra-methyl-ammonium hydroxide (TMAH), EDP solution, and a composition comprising KOH and isopropyl alcohol.   
   
   
       4 . The polish composition of  claim 1 , further comprising silica. 
   
   
       5 . The polish composition of  claim 4 , wherein the silica is a silica selected from the group consisting of colloidal silica and fumed silica. 
   
   
       6 . The polish composition of  claim 4 , wherein the silica has a diameter of less than about 60 nanometers (nm).