Semiconductor device and method of manufacturing the same

Abstract

The present invention relates to a semiconductor device and a method of manufacturing the same. A high-resistance silicon wafer is manufactured in such a manner that a large-sized silicon wafer manufactured by the Czochralski method is irradiated with neutrons, and high-resistance and low-resistance elements are simultaneously formed on the high-resistance silicon wafer. Thus, the manufacturing cost can be remarkably saved, and the reliability of products can be enhanced.

1 . A device comprising:
 a substrate; and   a high-resistance element in a first region of the substrate and a low-resistance element in a second region of the substrate.   
   
   
       2 . The device of  claim 1  wherein the substrate is a high resistance substrate. 
   
   
       3 . The device of  claim 1  comprises a semiconductor device. 
   
   
       4 . The device of  claim 1  wherein the low-resistance element is formed on an impurity ion implanted region formed in the second region of the substrate. 
   
   
       5 . The device of  claim 1  wherein the substrate is manufactured by irradiating neutrons onto a silicon wafer fabricated by a Czochralski method. 
   
   
       6 . The device of  claim 1  wherein the substrate has a resistance of 10 kΩ-cm or more. 
   
   
       7 . The device of  claim 1  wherein the low-resistance element comprises a transistor, a resistor, a capacitor, or a diode or a combination thereof. 
   
   
       8 . The device of  claim 1  wherein the high-resistance element comprises a radio frequency integrated passive device (RFIPD), an isolator, a transformer, a filter, a diplexer, a balance to unbalance transformer (balun), a coupler or an antenna or a combination thereof. 
   
   
       9 . A semiconductor device comprising:
 a substrate having a first region, wherein the first region comprises an impurity ion implanted region;   a low-resistance element on the first region;   a wire on an interlayer dielectric layer, wherein the wire is connected to the low-resistance element through an interlayer dielectric layer; and   a high-resistance element connected to a predetermined region of the wire.   
   
   
       10 . The semiconductor device of  claim 9  wherein the substrate is manufactured by irradiating neutrons onto a silicon wafer fabricated by a Czochralski method. 
   
   
       11 . The semiconductor device of  claim 9  wherein the substrate comprises a high resistance substrate having a resistance of 10 kΩ-cm or more. 
   
   
       12 . The semiconductor device of  claim 11  wherein the resistance of the substrate is adjusted according to the amount and irradiation time of neutrons. 
   
   
       13 . The semiconductor device of  claim 9  wherein the low-resistance element comprises a transistor, a resistor, a capacitor or a diode or a combination thereof. 
   
   
       14 . The semiconductor device of  claim 9  wherein the high-resistance element comprises a radio frequency integrated passive device (RFIPD), an isolator, a transformer, a filter, a diplexer, a balance to unbalance transformer (balun), a coupler or an antenna or a combination thereof. 
   
   
       15 . The semiconductor device of  claim 9  further comprising an inductor formed between the wire and the high-resistance element. 
   
   
       16 . A method of manufacturing a device comprising:
 ion-implanting an impurity in a first region of a substrate;   forming a low-resistance element on the first region of the substrate;   forming a first interlayer dielectric layer on the substrate over the low-resistance element;   forming a contact hole in the first interlayer dielectric layer to expose a predetermined region of the low-resistance element;   forming a first wire in the first interlayer dielectric layer, the first wire connected to the low-resistance element by the contact hole;   forming second interlayer dielectric layer over the first interlayer dielectric layer;   forming a via hole and a trench in the second interlayer dielectric layer, wherein the via hole exposes a predetermined region of the first wire and the trench comprises a predetermined shape;   forming an inductor by forming a conductive layer to fill the via hole and the trench; and   forming a high-resistance element connected to the inductor.   
   
   
       17 . The method of  claim 16  wherein the substrate is manufactured by irradiating neutrons onto a silicon ingot fabricated by the Czochralski method and cutting it. 
   
   
       18 . The method of  claim 17  wherein the resistance of the substrate is adjusted according to the amount and irradiation time of neutrons. 
   
   
       19 . The method of  claim 16  wherein the substrate is manufactured by cutting a silicon ingot fabricated by the Czochralski method at a predetermined thickness and irradiating it with neutrons. 
   
   
       20 . The method of  claim 19  wherein the resistance of the substrate is adjusted according to the amount and irradiation time of neutrons. 
   
   
       21 . The method of  claim 16  wherein the low-resistance element comprises a transistor, a resistor, a capacitor or a diode or a combination thereof.