US2009015906A1PendingUtilityA1

Extrinsic gain laser and optical amplification device

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Assignee: KIMERLING LIONEL CPriority: May 18, 2006Filed: May 18, 2007Published: Jan 15, 2009
Est. expiryMay 18, 2026(expired)· nominal 20-yr term from priority
Inventors:Lionel C. KimerlingHarry A. AtwaterMark L. BrongersmaLuca Dal NegroThomas L. KochPhilippe FauchetMichal LipsonJurgen Michel
H01S 3/0632H01S 3/0637H01S 3/083H01S 3/09H01S 3/1608H01S 3/169H01S 3/176H01S 3/2308
49
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Claims

Abstract

An optical amplifier on a silicon platform includes a first doped device layer and a second doped device layer. A gain medium is positioned between the first and second doped device layers. The gain medium comprises extrinsic gain materials so as to substantially confine in the gain medium a light signal and allow the optical amplifier to be electrically or optically pumped.

Claims

exact text as granted — not AI-modified
1 . An optical amplifier on a silicon platform comprising:
 a first doped device layer;   a second doped device layer; and   a gain medium positioned between said first and second doped device layers, said gain medium comprising extrinsic gain materials so as to substantially confine in said gain medium a light signal and allow said optical amplifier to be electrically and optically pumped.   
     
     
         2 . The optical amplifier of  claim 1 , wherein said first doped layer comprises p-type or n-type materials. 
     
     
         3 . The optical amplifier of  claim 1 , wherein said second doped layer comprises n-type or p-type materials. 
     
     
         4 . The optical amplifier of  claim 1 , wherein said extrinsic gain materials comprise Er ions. 
     
     
         5 . The optical amplifier of  claim 1 , wherein said extrinsic gain materials comprise Er-doped silicon nitride. 
     
     
         6 . The optical amplifier of  claim 1 , wherein said extrinsic gain materials comprise quantum dots. 
     
     
         7 . The optical amplifier of  claim 1 , wherein said extrinsic gain materials comprise Er-doped silicon dioxide. 
     
     
         8 . The optical amplifier of  claim 7 , wherein said Er-doped silicon dioxide comprises Si nanocrystals-sensitized Er. 
     
     
         9 . The optical amplifier of  claim 1 , wherein said extrinsic gain materials comprise Si nanowires. 
     
     
         10 . The optical amplifier of  claim 9 , wherein said Si nanowires are coupled to Er ions. 
     
     
         11 . The optical amplifier of  claim 6 , wherein said quantum dots comprise PbS or PbSe quantum dots. 
     
     
         12 . The optical amplifier of  claim 6 , wherein said quantum dots comprise Si quantum dots. 
     
     
         13 . The optical amplifier of  claim 1 , wherein said optical amplifier defines a horizontal slot waveguide. 
     
     
         14 . The optical amplifier of  claim 1 , wherein said optical amplifier defines a vertical slot waveguide. 
     
     
         15 . The optical amplifier of  claim 1 , wherein said light signal is polarized with its magnetic field predominantly polarized parallel to the interfaces between said device layers and said gain medium. 
     
     
         16 . The optical amplifier of  claim 1 , wherein said gain layer has dimensions less than or equal to 50 nm. 
     
     
         17 . A method of performing optical amplification of a light signal on a silicon platform comprising:
 positioning a first doped device layer;   positioning a second doped device layer; and   exposing said light signal to a gain medium positioned between said first and second doped device layers, said gain medium comprising extrinsic gain materials so as to substantially confine in said gain medium said light signal and allow said optical amplifier to be electrically and optically pumped.   
     
     
         18 . The method of  claim 17 , wherein said first doped layer comprises p-type or n-type materials. 
     
     
         19 . The method of  claim 17 , wherein said second doped layer comprises p-type or n-type materials. 
     
     
         20 . The method of  claim 17 , wherein said extrinsic gain materials comprise Er ions. 
     
     
         21 . The method of  claim 17 , wherein said extrinsic gain materials comprise Er-doped silicon nitride. 
     
     
         22 . The method of  claim 17 , wherein said extrinsic gain materials comprise quantum dots. 
     
     
         23 . The method of  claim 17 , wherein said extrinsic gain materials comprise Er-doped silicon dioxide. 
     
     
         24 . The method of  claim 23 , wherein said Er-doped silicon dioxide comprises Si nanocrystals-sensitized Er. 
     
     
         25 . The method of  claim 17 , wherein said extrinsic gain materials comprise Si nanowires. 
     
     
         26 . The method of  claim 25 , wherein said Si nanowires are coupled to Er ions. 
     
     
         27 . The method of  claim 22 , wherein said quantum dots comprise PbS or PbSe quantum dots. 
     
     
         28 . The method of  claim 22 , wherein said quantum dots comprise Si quantum dots. 
     
     
         29 . The method of  claim 17 , wherein said light signal is polarized with its magnetic field predominantly polarized parallel to the interfaces between said device layers and said gain medium. 
     
     
         30 . The method of  claim 17 , wherin said gain layer has dimensions less than or equal to 50 nm. 
     
     
         31 . A method of forming an optical amplifier on a silicon platform comprising:
 forming a first doped device layer;   forming a second doped device layer; and   forming a gain medium positioned between said first and second doped device layers, said gain medium comprising extrinsic gain materials so as to substantially confine in said gain medium a light signal and allow said optical amplifier to be electrically and optically pumped.   
     
     
         32 . The method of  claim 31 , wherein said first doped layer comprises p-type or n-type materials. 
     
     
         33 . The method of  claim 31 , wherein said second doped layer comprises p-type or n-type materials. 
     
     
         34 . The method of  claim 31 , wherein said extrinsic gain materials comprise Er ions. 
     
     
         35 . The method of  claim 31 , wherein said extrinsic gain materials comprise Er-doped silicon nitride. 
     
     
         36 . The method of  claim 31 , wherein said extrinsic gain materials comprise quantum dots. 
     
     
         37 . The method of  claim 31 , wherein said extrinsic gain materials comprise Er-doped silicon dioxide. 
     
     
         38 . The method of  claim 37 , wherein said Er-doped silicon dioxide comprises Si nanocrystals-sensitized Er. 
     
     
         39 . The method of  claim 31 , wherein said extrinsic gain materials comprise Si nanowires. 
     
     
         40 . The method of  claim 39 , wherein said Si nanowires are coupled to Er ions. 
     
     
         41 . The method of  claim 37 , wherein said quantum dots comprise PbS or PbSe quantum dots. 
     
     
         42 . The method of  claim 37 , wherein said quantum dots comprise Si quantum dots. 
     
     
         43 . The method of  claim 31 , wherein said light signal is polarized with its magnetic field predominantly polarized parallel to the interfaces between said device layers and said gain medium. 
     
     
         44 . The method of  claim 31 , wherein said gain layer has dimensions less than or equal to 50 nm.

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