Vertical resonator type light emitting diode

Abstract

A novel vertical resonator type light emitting diode of which has a simplified structure of the reflector layer of its light emitting side an which is resistant to declination of its emission output power towards a high temperature range, has an active layer 5 , and a first reflector layer 3 at its light reflecting side and a second reflector layer 9 at its light emitting side which are formed to sandwich the active later 5 between them, wherein each of the first reflector layer 3 and the second reflector layer 9 is structured to comprise a plurality of pairs of two alternate semiconductor layers formed which are different from each other in refractive index, and the second reflector layer 9 has a number of such pairs which is not less than 1/10 and not more than ⅓ of that which said first reflector layer 3 has. The emission output power can be enhanced when the first reflector layer has a number of such pairs which is not less than 11 and not more than 41.

1 . A vertical resonator type light emitting diode having an active layer, and a first reflector layer at its light reflecting side and a second reflector layer at its light emitting side which are formed to sandwich the active later between them, characterized in that:
 each of said first reflector layer and said second reflector layer is structured to comprise a plurality of pairs of two alternate semiconductor layers formed which are different from each other in refractive index, and   said second reflector layer has a number of such pairs which is not less than 1/10 and not more than ⅓ of that which said first reflector layer has.   
   
   
       2 . The vertical resonator type light emitting diode as set forth in  claim 1 , characterized in that said first reflector layer has a number of such pairs which is not less than 11 and not more than 41.