Glass-based SOI structures

Abstract

A method of forming a semiconductor on glass structure includes: establishing an exfoliation layer on a semiconductor wafer; contacting the exfoliation layer of the semiconductor wafer to a glass substrate; applying pressure, temperature and voltage to the semiconductor wafer and the glass substrate, without a vacuum atmosphere, such that a bond is established therebetween via electrolysis; and applying stress such that the exfoliation layer separates from the semiconductor wafer and remains bonded to the glass substrate.

1 - 19 . (canceled) 
   
   
       20 . A method of forming a semiconductor on glass structure, comprising:
 establishing an exfoliation layer on a semiconductor wafer;   contacting the exfoliation layer of the semiconductor wafer to a glass substrate; and   applying pressure, temperature and voltage to the semiconductor wafer and the glass substrate, without a vacuum atmosphere, such that a bond is established therebetween via electrolysis and such that the exfoliation layer separates from the semiconductor wafer and remains bonded to the glass substrate, whereby, and such that the glass substrate includes: (i) a first substrate layer adjacent the exfoliation layer having a reduced modifier positive ion concentration, and (ii) a second substrate layer adjacent the first substrate layer having an enhanced modifier positive ion concentration,   wherein the first substrate layer with the reduced modifier positive ion concentration is operable to inhibit ion re-migration from the glass substrate into the exfoliation layer.   
   
   
       21 . The method of  claim 20 , wherein the step of applying pressure, temperature and voltage includes causing at least one alkaline earth modifier ion to move from the first substrate layer to the second substrate layer. 
   
   
       22 . The method of  claim 20 , wherein the step of applying pressure, temperature and voltage includes substantially depleting the first substrate layer of all of alkali/alkaline-earth modifier positive ions. 
   
   
       23 . The method of  claim 20 , wherein the step of applying pressure, temperature and voltage includes maintaining one or more network forming ions in the first substrate layer. 
   
   
       24 . The method of  claim 20 , wherein the step of applying pressure, temperature and voltage includes causing non-bridging oxygens in the first substrate layer to move in a direction away from the exfoliation layer. 
   
   
       25 . The method of  claim 20 , wherein the modifier positive ions include at least one of: Li+1, Na+1, K+1, Cs+1, Mg+2, Ca+2, Sr+2, and/or Ba+2. 
   
   
       26 . The method of  claim 20 , wherein the bonding step is carried out in ambient air. 
   
   
       27 . The method of  claim 20 , wherein the bonding step is carried out in a substantially inert gas atmosphere. 
   
   
       28 . The method of  claim 27 , wherein the inert gas is nitrogen. 
   
   
       29 . The method of  claim 27 , wherein the inert gas is argon. 
   
   
       30 . The method of  claim 27 , wherein the inert gas is selected from the group consisting of helium, neon, krypton, xenon and radon.