Nitride semiconductor light-emitting device and method of manufacturing nitride semiconductor light-emitting device

Abstract

A nitride semiconductor light-emitting device including a coating film and a reflectance control film successively formed on a light-emitting portion, in which the light-emitting portion is formed of a nitride semiconductor, the coating film is formed of an aluminum oxynitride film or an aluminum nitride film, and the reflectance control film is formed of an oxide film, as well as a method of manufacturing the nitride semiconductor light-emitting device are provided.

1 .- 9 . (canceled) 
     
     
         10 . A nitride semiconductor light-emitting device comprising a coating film formed on a facet of a nitride semiconductor, wherein
 said coating film is formed of an aluminum oxynitride film or an aluminum nitride film, and oxygen content in said coating film varies in the direction of thickness of said coating film, and said oxygen content in said coating film is in a range from at least 0 atomic % at most 35 atomic %.   
     
     
         11 . The nitride semiconductor light-emitting device of  claim 10 , wherein a reflectance control film formed of an oxide is formed on said coating film. 
     
     
         12 . A nitride semiconductor light-emitting device according to  claim 10 , wherein the thickness of said coating film is no less than 1 nm and no more than 50 nm.