Solid-state image pick-up device

Abstract

A plurality of low-sensitivity pixels 10 and a plurality of high-sensitivity pixels 20 are arranged like a tetragonal grid respectively, and are provided in positions shifted by ½ of an array pitch from each other in a row direction X and a column direction Y. The detected charges of the low-sensitivity pixel 10 and the high-sensitivity pixel 20 are transferred in the column direction Y by a vertical transfer section 31 . The charges of the low-sensitivity pixel 10 and the high-sensitivity pixel 20 which are adjacent to each other in the column direction are transferred through the vertical transfer sections 31 which are different from each other.

1 . A solid-state image pick-up device having a plurality of photoelectric converting devices arranged in a row direction and a column direction orthogonal thereto over a surface of a semiconductor substrate, the solid-state image pick-up device comprising:
 color filters arranges above the photoelectric converting devices, wherein:   the photoelectric converting devices include
 first photoelectric converting devices that are arranged in the row direction and the column direction in a tetragonal grid manner, and 
 second photoelectric converting devices that are arranged in the row converting direction and the column direction in a tetragonal grid manner, 
   the first photoelectric converting devices and the second photoelectric converting devices are arranges at an equal array pitch in positions shifted by ½ of the array pitch from each other in the row direction and the column direction, and   the color filters arranges above the first photoelectric converting devices and the color filters arranges above the second photoelectric converting devices have a Bayer array.   
   
   
       2 . The solid-state image pick-up device according to  claim 1 , wherein
 the first photoelectric converting devices are plural high-sensitivity photoelectric converting devices that perform relatively high-sensitivity photoelectric conversion, and   the second photoelectric converting devices are plural low-sensitivity photoelectric converting devices that perform relatively low-sensitivity photoelectric conversion.   
   
   
       3 . The solid-state image pick-up device according to  claim 1 , further comprising:
 a vertical transfer section that transfers charges from the photoelectric converting devices in the column direction;   a horizontal transfer section that transfers, in the row direction, the charges from the vertical transfer section; and   an output section that outputs signals in accordance with the charges transferred by the horizontal transfer section, wherein   the vertical transfer section comprises
 plural vertical transfer channels formed on the semiconductor s substrate so as to correspond to the plural photoelectric converting devices arranged in the column direction, 
 plural vertical transfer electrodes formed to cross the respective vertical transfer channels on plan view, and 
 charge reading regions that read the charges from the photoelectric converting devices to the vertical transfer channels, 
   each of the vertical transfer channels takes a winding shape extended wholly in the column direction between the photoelectric converting devices,   each of the vertical transfer electrodes takes a winding shape extended wholly in the row direction between the photoelectric converting devices, and   the charge reading regions of the first photoelectric converting devices and the charge reading regions of the second photoelectric converting devices are formed in positions corresponding to the vertical transfer electrodes different from each other.   
   
   
       4 . The solid-state image pick-up device according to  claim 2 , further comprising:
 a vertical transfer section that transfers charges from the photoelectric converting devices in the column direction;   a horizontal transfer section that transfers, in the row direction, the charges from the vertical transfer section; and   an output section that outputs signals in accordance with the charges transferred by the horizontal transfer section, wherein   the vertical transfer section comprises
 plural vertical transfer channels formed on the semiconductor s substrate so as to correspond to the plural photoelectric converting devices arranged in the column direction, 
 plural vertical transfer channels formed on the semiconductor substrate so as to correspond to the plural photoelectric converting devices arranged in the column direction, 
 plural vertical transfer electrodes formed to cross the respective vertical transfer channels on plan view, and 
 charge reading regions that read the charges from the photoelectric converting devices to the vertical transfer channels, 
   each of the vertical transfer channels takes a winding shape extended wholly in the column direction between the photoelectric converting devices,   each of the vertical transfer electrodes takes a winding shape extended wholly in the row direction between the photoelectric converting devices, and   the charge reading regions of the first photoelectric converting devices and the charge reading regions of the second photoelectric converting devices are formed in positions corresponding to the vertical transfer electrodes different from each other.