Apparatus and method for diamond production

Abstract

An apparatus for producing diamond in a deposition chamber including a heat-sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measurement device positioned to measure temperature of the diamond across the growth surface of the diamond and a main process controller for receiving a temperature measurement from the noncontact temperature measurement device and controlling temperature of the growth surface such that all temperature gradients across the growth surface are less than 20° C. The method for producing diamond includes positioning diamond in a holder such that a thermal contact is made with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, measuring temperature of the growth surface of the diamond to generate temperature measurements, controlling temperature of the growth surface based upon the temperature measurements, and growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface, wherein a growth rate of the diamond is greater than 1 micrometer per hour.

1 .- 64 . (canceled) 
   
   
       65 . In a method for diamond production, comprising controlling temperature of a growth surface of the diamond such that all temperature gradients across the growth surface are less than 20° C.; and growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface at a temperature of 900-1400° C. in a deposition chamber having an atmosphere with a pressure of at least 130 torr, the modification wherein said atmosphere includes oxygen. 
   
   
       66 . The method of claim  1 , wherein said atmosphere further includes hydrogen and Methane. 
   
   
       67 . The method of claim  2 , wherein said atmosphere further includes nitrogen. 
   
   
       68 . The method of claim  3 , wherein said atmosphere includes 1-5% nitrogen per unit of hydrogen and 6-12% methane per unit of hydrogen. 
   
   
       69 . The method of claim  4 , wherein said atmosphere includes 1-3% oxygen per unit of hydrogen.