Semiconductor light emitting device and method of manufacturing the same

Abstract

Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, a first thin insulating layer, and a second conductive type semiconductor layer. The active layer is formed on the first conductive type semiconductor layer. The first thin insulating layer is formed on the active layer. The second conductive type semiconductor layer is formed on the thin insulating layer.

1 . A semiconductor light emitting device comprising:
 a first conductive type semiconductor layer;   an active layer on the first conductive type semiconductor layer;   a first thin insulating layer on the active layer; and   a second conductive type semiconductor layer on the thin insulating layer.   
   
   
       2 . The semiconductor light emitting device according to  claim 1 , wherein the first thin insulating layer is provided a high resistive layer and a low conductive layer compared with the second conductive type semiconductor layer. 
   
   
       3 . The semiconductor light emitting device according to  claim 1 , wherein the first thin insulating layer comprises at least one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. 
   
   
       4 . The semiconductor light emitting device according to  claim 1 , wherein the first thin insulating layer is doped with a P-type dopant, and comprised a p-type carrier concentration of about 5×10 18  /cm 3  or less. 
   
   
       5 . The semiconductor light emitting device according to  claim 1 , wherein a thickness of the first thin insulating layer is greater than about 0 nm and less than or equal to about 9 nm. 
   
   
       6 . The semiconductor light emitting device according to  claim 1 , comprising at least one second thin insulating layer in the second conductive type semiconductor layer. 
   
   
       7 . The semiconductor light emitting device according to  claim 6 , wherein the second thin insulating layer is doped with a P-type dopant to have an insulating property and comprises at least one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. 
   
   
       8 . The semiconductor light emitting device according to  claim 6 , wherein the second thin insulating layer is disposed as a high resistive layer in the second conductive type semiconductor layer. 
   
   
       9 . A semiconductor light emitting device comprising:
 a first conductive type semiconductor layer;   an active layer on the first conductive type semiconductor layer;   a second conductive type semiconductor layer on the active layer;   an electrode layer on the second conductive type semiconductor layer; and   a thin insulating layer between the active layer and the electrode layer.   
   
   
       10 . The semiconductor light emitting device according to  claim 9 , wherein the thin insulating layer is between a quantum barrier layer of the active layer and the second conductive type semiconductor layer. 
   
   
       11 . The semiconductor light emitting device according to  claim 9 , wherein the second conductive type semiconductor layer comprises at least two layers, and
 the thin insulating layer comprises a first thin insulating layer between the active layer and the second conductive type semiconductor layer; and a second thin insulating layer between two layers of the second conductive type semiconductor layer.   
   
   
       12 . The semiconductor light emitting device according to  claim 9 , wherein the thin insulating layer comprises:
 a first thin insulating layer between the active layer and the second conductive type semiconductor layer; and   a second thin insulating layer between the second conductive type semiconductor layer and the electrode layer.   
   
   
       13 . The semiconductor light emitting device according to  claim 9 , wherein the thin insulating layer is doped with a group II element, and comprised a p-type carrier concentration of about 5×10 18 /cm 3  or less. 
   
   
       14 . The semiconductor light emitting device according to  claim 9 , wherein the thin insulating layer serves as a high resistive layer and a low conductive layer compared with the second conductive type semiconductor layer. 
   
   
       15 . The semiconductor light emitting device according to  claim 9 , comprising an N-type semiconductor layer on the second conductive type semiconductor layer,
 wherein the first conductive type semiconductor layer is an N-type semiconductor layer, and the second conductive type semiconductor layer is a P-type semiconductor layer.   
   
   
       16 . The semiconductor light emitting device according to  claim 9 , comprising at least one of an undoped semiconductor layer, a buffer layer, a substrate, and a first electrode layer under the first conductive type semiconductor layer. 
   
   
       17 . The semiconductor light emitting device according to  claim 9 , wherein the electrode layer comprises at least one of a transparent electrode layer and a second electrode layer. 
   
   
       18 . A method of manufacturing a semiconductor light emitting device, the method comprising:
 forming a first conductive type semiconductor layer;   forming an active layer on the first conductive type semiconductor layer;   forming a first thin insulating layer on the active layer; and   forming a second conductive type semiconductor layer on the first thin insulating layer.   
   
   
       19 . The method according to  claim 18 , wherein the thin insulating layer is doped with a P-type dopant in a hole concentration 5×10 18 /cm or less. 
   
   
       20 . The method according to  claim 18 , comprising forming at least one second thin insulating layer in or on the second conductive type semiconductor layer.