Semiconductor light emitting device

Abstract

A semiconductor light emitting device and a method of manufacturing the semiconductor light emitting device are provided. The semiconductor light emitting device comprises a substrate having a top surface that is curved to protrude, and a light emitting structure that is curved to protrude on the substrate and comprises an active layer.

1 . A semiconductor light emitting device comprising:
 a substrate comprising a top surface curved to protrude; and   a light emitting structure curved to protrude on the substrate and comprises an active layer.   
   
   
       2 . The semiconductor light emitting device according to  claim 1 , wherein the light emitting structure is curved with a same curvature as the substrate. 
   
   
       3 . The semiconductor light emitting device according to  claim 1 , wherein the top surface of the substrate protrudes with a predetermined curvature from both opposite lowest points to a central highest point. 
   
   
       4 . The semiconductor light emitting device according to  claim 3 , wherein the lowest points of the top surface of the substrate are formed on at least two sides. 
   
   
       5 . The semiconductor light emitting device according to  claim 1 , wherein a thickness of the substrate at a highest point of the top surface is greater than a thickness of the substrate at a lowest point of the top surface by 1-100 μm. 
   
   
       6 . The semiconductor light emitting device according to  claim 1 , wherein the top surface of the substrate is provided with a protrusion/groove pattern. 
   
   
       7 . The semiconductor light emitting device according to  claim 6 , wherein the protrusion/groove pattern comprises at least one of a plurality of cone-shaped protrusions, a plurality of hemi-circular-shape protrusions, a plurality of convex lens-shaped protrusions, and a plurality of polygonal-shaped protrusions. 
   
   
       8 . The semiconductor light emitting device according to  claim 1 , wherein the light emitting structure comprises at least one conductive type semiconductor layer on and under the active layer. 
   
   
       9 . The semiconductor light emitting device according to  claim 1 , comprising at least one of a buffer layer and an undoped semiconductor layer, which is curved to protrude between the substrate and the light emitting structure. 
   
   
       10 . A semiconductor light emitting device comprising:
 a first conductive type semiconductor layer curved in a first direction;   an active layer curved in the first direction on the first conductive type semiconductor layer; and   a second conductive type semiconductor layer curved in the first direction on the active layer.   
   
   
       11 . The semiconductor light emitting device according to  claim 10 , wherein the first conductive type semiconductor layer, the active layer, and the second conductive type semiconductor layer are curved to protrude upward. 
   
   
       12 . The semiconductor light emitting device according to  claim 10 , wherein the first conductive type semiconductor layer, the active layer, and the second conductive type semiconductor layer are curved to protrude downward. 
   
   
       13 . The semiconductor light emitting device according to  claim 10 , wherein the first conductive type semiconductor layer, the active layer, and the second conductive type semiconductor layer are curved with a same curvature. 
   
   
       14 . The semiconductor light emitting device according to  claim 10 , comprising at least one of a buffer layer, an undoped semiconductor layer, and a substrate that are curved to protrude upward under the first conductive type semiconductor layer. 
   
   
       15 . The semiconductor light emitting device according to  claim 10 , wherein at least one of the layers that are curved is provided with a protrusion/groove pattern. 
   
   
       16 . The semiconductor light emitting device according to  claim 10 , comprising at least one of an N-type semiconductor layer, a transparent electrode layer, a reflective electrode layer, and a conductive substrate that are formed on the second conductive type semiconductor layer and curved to protrude in the first direction. 
   
   
       17 . The semiconductor light emitting device according to  claim 14 , wherein the substrate comprises at least one of sapphire (Al 2 O 3 ), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, and a highest point of the substrate is higher than a lowest point by 1-100 μm. 
   
   
       18 . A method of manufacturing a semiconductor light emitting device, the method comprising:
 forming a substrate comprising a top surface curved to protrude;   forming a semiconductor layer comprising a light emitting structure on the top surface of the substrate such that the semiconductor layer is curved to protrude.   
   
   
       19 . The method according to  claim 18 , wherein the semiconductor layer is formed with a same curvature as the top surface of the substrate. 
   
   
       20 . The method according to  claim 18 , wherein the top surface of the substrate comprises a protrusion/groove pattern.