Sputtering target structure

Abstract

To provide a sputtering target structure which has good machinability and thermal conductivity and has good wettability with soldering materials, which is inexpensive and can be used repeatedly for a long period of time, and which is free from problems of cracking and peeling of the sputtering target therein, a sputtering target structure is formed by bonding a sputtering target and a backing plate. The backing plate is formed of a material that has the difference in the linear expansion coefficient between it and the sputtering target material of at most 2×10 −6 /K, and a copper plate having a thickness of from 0.3 to 1.5 mm is disposed on at lest one face of the backing plate.

1 . A sputtering target structure formed by bonding a sputtering target and a backing plate, wherein the backing plate is formed of a material that has a linear expansion coefficient different from that of the sputtering target material by at most 2×10 −6 /K, and a copper plate having a thickness of from 0.3 to 1.5 mm is disposed on at lest one face of the backing plate. 
     
     
         2 . The sputtering target structure as claimed in  claim 1 , wherein the material to constitute the backing plate is a composite material that comprises aluminium or aluminium alloy as the matrix and, as incorporated therein, one or more granular or fibrous reinforcing materials selected from the group consisting of carbon, silicon carbide, alumina, silicon nitride, mullite and aluminium borate, and the material has a linear expansion coefficient of from 3.5 to 17×10 −6 /K. 
     
     
         3 . The sputtering target structure as claimed in  claim 1 , wherein the sputtering target and the backing plate are bonded together with indium, tin or their alloy. 
     
     
         4 . The sputtering target structure as claimed in  claim 1 , wherein the backing plate has a cooling channel inside it and the inner cooling channel is a copper or stainless steel pipe. 
     
     
         5 . The sputtering target structure as claimed in  claim 2 , wherein the backing plate has a cooling channel inside it and the inner cooling channel is a copper or stainless steel pipe. 
     
     
         6 . The sputtering target structure as claimed in  claim 3 , wherein the backing plate has a cooling channel inside it and the inner cooling channel is a copper or stainless steel pipe.