Iii-nitride device

Abstract

A III-nitride device that includes a silicon body having formed therein an integrated circuit and a III-nitride device formed over a surface of the silicon body.

1 . A semiconductor device, comprising:
 a support substrate that includes a silicon body having an integrated circuit formed therein; and   a III-nitride body comprising a III-nitride semiconductor device formed over a surface of said silicon body.   
   
   
       2 . The device of  claim 1 , wherein said III-nitride body includes a III-nitride heterojunction comprised of a first III-nitride layer of one band gap and a second III-nitride layer of another band gap formed over said first III-nitride layer. 
   
   
       3 . The device of  claim 2 , wherein said III-nitride body includes a buffer layer interposed between said III-nitride heterojunction and said silicon body. 
   
   
       4 . The device of  claim 1 , further comprising another silicon body and an insulation body interposed between said silicon body and said another silicon body. 
   
   
       5 . The device of  claim 4 , wherein said silicon body is comprised of (111) silicon. 
   
   
       6 . The device of  claim 4 , wherein said another silicon body is comprised of (1 11 ) silicon. 
   
   
       7 . The device of  claim 4 , wherein said another silicon body is comprised of (100) silicon. 
   
   
       8 . The device of  claim 4 , wherein said insulation body is comprised of silicon dioxide. 
   
   
       9 . The device of  claim 4 , wherein said insulation body is between 0.1 to 2 microns thick. 
   
   
       10 . The device of  claim 4 , wherein said insulation body is about 0.5 microns thick. 
   
   
       11 . The device of  claim 4 , wherein said insulation body binds said first silicon body to said second silicon body. 
   
   
       12 . The device of  claim 4 , wherein said silicon body is N++ doped. 
   
   
       13 . The device of  claim 4 , wherein said silicon body is P++ doped. 
   
   
       14 . The device of  claim 1 , wherein said silicon body includes an epitaxially formed portion. 
   
   
       15 . The device of  claim 1 , wherein said III-nitride body includes a power semiconductor device and said integrated circuit formed in said silicon body comprises logic devices for operating said power semiconductor device. 
   
   
       16 . The device of  claim 15 , further comprising a via through said III-nitride body reaching said silicon body, and a conductor disposed within said via connecting an electrode of said power semiconductor device to said another silicon body. 
   
   
       17 . The device of  claim 1 , further comprising an insulation body formed over said silicon body and said III-nitride body, said insulation body including a via, said via including a conductive body connecting said IC to said III-nitride body.