High power light emitting device assembly with esd protection ability and the method of manufacturing the same

Abstract

A high power light emitting device assembly with electro-static-discharge (ESD) protection ability and the method of manufacturing the same, the assembly comprising: at least two sub-mounts, respectively being electrically connected to an anode electrode and a cathode electrode, each being made of a metal of high electric conductivity and high thermal conductivity; a light emitting device, arranged on the sub-mounts; and an ESD protection die, sandwiched and glued between the sub-mounts, for enabling the high-power operating light emitting device to have good heat dissipating path while preventing the same to be damaged by transient power overload of static surge.

1 . A method for manufacturing a light emitting device assembly with ESD protection ability, comprising steps of:
 (a) sandwiching and gluing an ESD protection die between two metal plate for forming a stacked structure, and then dicing the stacked structure into a plurality of dices;   (b) rotating a dice selected from the plural dices;   (c) connecting at least a light emitting device to the dice by a flip chip process; and   (d) connecting the two metal layers of the dice to an anode electrode and a cathode electrode in respective.   
   
   
       2 . The method of  claim 1 , wherein the thickness of each metal plate is ranged between 300 μm˜3000 μm. 
   
   
       3 . The method of  claim 1 , wherein each metal plate is made of a metal of high conductivity and high thermal conductivity, such as copper, aluminum, iron, or the alloy thereof. 
   
   
       4 . The method of  claim 1 , wherein each metal plate is made of a composite metallic material of high conductivity, high thermal conductivity and low thermal expansion coefficient, such as Cu/Mo/Cu (CMC), etc. 
   
   
       5 . The method of  claim 4 , wherein the coefficient of thermal expansion of each metal plate made of composite metallic material is ranged between 4 ppm/° C. and 10 ppm/° C. 
   
   
       6 . The method of  claim 1 , wherein the overall measure of length and width of each dice are respectively fallen in the range of 300 μm˜6000 μm. 
   
   
       7 . The method of  claim 1 , wherein the at least one light emitting is a solid-state light source. 
   
   
       8 . The method of  claim 7 , wherein the solid-state light source is a light emitting diode (LED) with a p-side electrode and an n-side electrode. 
   
   
       9 . The method of  claim 8 , wherein the p-side and the n-side electrodes are arranged at different sides of each corresponding LED while connecting electrically to the dice. 
   
   
       10 . The method of  claim 1 , wherein the light emitting surface of each light emitting device is sealed and packaged by a transparent material. 
   
   
       11 . The method of  claim 10 , wherein the transparent material is a resin selected from the group consisting of transparent resins and epoxy resin. 
   
   
       12 . The method of  claim 1 , wherein the thickness of the ESD protection die is ranged between 10 μm and 200 μm. 
   
   
       13 . The method of  claim 1 , wherein the ESD protection die is a device selected from the group consisting of a zener diode, a Schottky-barrier diode, a silicon diode, a □-V Compound diode and the combination thereof 
   
   
       14 . The method of  claim 1 , wherein the ESD protection die can be a back-to-back LED structure. 
   
   
       15 . The method of  claim 14 , wherein the polarity arrangement of the back-to-back LED structure is selected from the group consisting of PNP and NPN. 
   
   
       16 . The method of  claim 1 , wherein a multi-chip LED assembly is formed by parallelly connecting a plural of the light emitting devices while the plural parallel-connected light emitting device is connected to the dice.