Charge-free low-temperature method of forming thin film-based nanoscale materials and structures on a substrate

Abstract

A method of forming a nanostructure at low temperatures. A substrate that is reactive with one of atomic oxygen and nitrogen is provided. A flux of neutral atoms of least one of nitrogen and oxygen is generated within a laser-sustained-discharge plasma source and a collimated beam of energetic neutral atoms and molecules is directed from the plasma source onto a surface of the substrate to form the nanostructure. The energetic neutral atoms and molecules in the plasma have an average kinetic energy in a range from about 1 eV to about 5 eV.

1 . A nanoscale material disposed on a substrate, the nanoscale material comprising at least one of an oxide and a nitride, wherein the nanoscale material is formed by:
 a. providing the substrate;   b. providing a flux of at least one element to a surface of a substrate, wherein the at least one element is an element other than oxygen and nitrogen;   c. introducing at least one of nitrogen and oxygen into a plasma within a plasma source, wherein the plasma dissociates, heats, and energizes the at least one of nitrogen and oxygen;   d. extracting a collimated flux of energetic neutral atoms and molecules of at least one of nitrogen and oxygen from the plasma source; and   e. directing the collimated flux from the plasma source onto the surface of the substrate, wherein the at least one element reacts with the energetic neutral atoms to form the nanoscale material on the surface.   
     
     
         2 . The nanoscale material according to  claim 1 , wherein the element is selected from the group consisting of silicon, germanium, gallium, indium, aluminum, zinc, magnesium, manganese, cobalt, tin, iron, and titanium. 
     
     
         3 . The nanoscale material according to  claim 1 , wherein the nanoscale material comprises at least one of aluminum nitride, gallium nitride, indium nitride, silicon nitride, aluminum oxide, titanium oxide, zinc oxide, and silica. 
     
     
         4 . The method according to  claim 1 , wherein the substrate is one of silicon, sapphire, silicon carbide, and zinc oxide. 
     
     
         5 . The method according to  claim 3 , wherein the nanoscale material is epitaxially deposited on the substrate. 
     
     
         6 . The method according to  claim 1 , wherein the substrate is one of a polymeric substrate, highly oriented pyrolytic carbon, glassy carbon, and diamond. 
     
     
         7 . The method according to  claim 6 , wherein the polymeric substrate is templated. 
     
     
         8 . The method according to  claim 6 , wherein the polymeric substrate is one of a polyimide, polymethyl methacrylate, a polycarbonate, perfluorinated cyclobutane, and combinations thereof.