Device and methods for internal cooling of an integrated circuit (IC)

Abstract

Device and methods are provided for an up-conversion energy internal cooling of electronic devices such as IC chips, which enable efficient cooling of high frequency rate, high power and density electronic devices. Up-conversion energy internal cooling IC chips are designed to provide uniform internal cooling with possibility of localized cooling capabilities for high frequency processing rate/high power density regions of IC chips. The design also includes external cooling of the IC chips, or theirs electronic components by an electromagnetic source.

1 . An integrated circuit (IC) chip with internal up-conversion cooling comprises of: at least one electronic component, wherein the electronic component is capable to emit electromagnetic energy at a wavelength  1  during changing it's charge; an up-conversion medium surrounding the electronic component or embedded into the electronic component, the medium is capable to cool the electronic component by absorption of energy at the wavelength  1  emitted by the electronic component and then by emitting the absorbed energy at a wavelength  2 , wherein quantum energy of the wavelength  2  is higher than quantum energy of the wavelength  1 ; and a power supply capable to change the charge in the electronic component. 
   
   
       2 . The IC chip claimed in  claim 1 , wherein the electronic component is selected from the group of: capacitor, transistor, diode, semiconductor diode, semiconductor transistor, charge couple cell, quantum well, or semiconductor multiple junction electronic component. 
   
   
       3 . The IC chip claimed in  claim 1 , wherein the up-conversion medium is a liquid, a gas-state material, or a solid-state material. 
   
   
       4 . The IC chip claimed in  claim 1 , wherein the up-conversion medium further contains a non up-conversion material to enhance up-conversion or cooling capabilities of the medium. 
   
   
       5 . The IC chip claimed in  claim 1 , wherein the IC chip further comprises of an electromagnetic source emitting energy at the wavelength  1 . 
   
   
       6 . The IC chip claimed in  claim 1 , wherein changing of the charge in the electronic component is within a single type of the charge or within a plurality types of the charges. 
   
   
       7 . The IC chip claimed in  claim 1 , wherein the wavelength  1  or the wavelength  2  is selected within a range of 1 nanometer to 20,000 nm. 
   
   
       8 . The IC chip claimed in  claim 1 , wherein the wavelength  1  or the wavelength  2  is a single wavelength band or a plurality wavelength band. 
   
   
       9 . The method for internal cooling of IC chips comprises steps of: providing at least one electronic component with a power supply capable to change a charge in the electronic component, wherein the electronic component is capable of to emit electromagnetic energy at a wavelength  1  when is changing it's charge; providing an up-conversion medium, the medium is capable to cool the electronic component by absorption of energy at the wavelength  1  emitted by the electronic component and by emitting the absorbed energy at a wavelength  2 , wherein quantum energy of the wavelength  2  is higher than quantum energy of the wavelength  1 ; surrounding or embedding the medium into the electronic component; and changing the charge in the electronic component by the power supply. 
   
   
       10 . The method of  claim 9 , wherein the electronic component is selected from the group of: capacitor, transistor, diode, semiconductor diode, semiconductor transistor, charge couple cell, quantum well, or semiconductor multiple junction electronic component. 
   
   
       11 . The method of  claim 9 , wherein the up-conversion medium is a liquid, a gas-state material, or a solid-state material. 
   
   
       12 . The method of  claim 9 , wherein the up-conversion medium further contains a non up-conversion material to enhance up-conversion or cooling capabilities of the medium. 
   
   
       13 . The method of  claim 9 , wherein the wavelength  1  or the wavelength  2  is selected within a range of 1 nanometer to 20,000 nm. 
   
   
       14 . The method of  claim 9 , wherein the wavelength  1  or the wavelength  2  is a single wavelength band or a plurality wavelength band. 
   
   
       15 . The method of  claim 9 , wherein the method is further supported with steps of: providing an electromagnetic source emitting energy at the wavelength  1 ; and irradiating the up-conversion medium by the electromagnetic source to cool the medium. 
   
   
       16 . The method of  claim 9 , wherein changing of the charge in the electronic component is within a single type of the charge or within a plurality types of the charges.