Method of forming titanium film by CVD

Abstract

A Ti film is formed by CVD in holes formed in an insulating film formed on a Si substrate or on a Si film formed on a Si substrate by a method according to the present invention. The method includes the steps of: loading a Si substrate into a film forming chamber; evacuating the chamber at a predetermined vacuum; supplying TiCl 4 gas, H 2 gas, Ar gas and SiH 4 gas into the film forming chamber; and producing a plasma in the film forming chamber to deposit a Ti film in the holes formed in the insulating film. The Si substrate is heated at 500° C. or below during the deposition of the Ti film. The flow rate of the SiH 4 gas is from 30 to 70% of the flow rate of the TiCl 4 gas. This method enables formation of a Ti film on a Si base at positions of holes in an insulating layer, with a good morphology of the interface between the Si base and the Ti film and with a good step coverage.

1 - 6 . (canceled) 
   
   
       7 . A method of removing a film formed on a surface of a process vessel defining a film forming chamber or a surface of a member arranged in the film forming chamber, said method comprising the steps of:
 evacuating the film forming chamber to establish therein an atmosphere of a reduced pressure;   heating the surfaces at a predetermined temperature; and   supplying gases including an inert gas, HF gas, and HCl gas into the film forming chamber so that the gases react with the film to decompose the film.   
   
   
       8 . The method according to  claim 7 , wherein the inert gas is selected from the group consisting of Ar gas, He gas, Kr gas and Xe gas. 
   
   
       9 . The method according to  claim 7 , further comprising the steps of:
 supplying the gases into a plasma generating chamber arranged remote from the film forming chamber; and   generating a plasma in the plasma generating chamber,   wherein the step of supplying gases into the film forming chamber includes a step of supplying the gases, having been converted into active species in the plasma generating chamber, into the film forming chamber.   
   
   
       10 . The method according to  claim 7 , wherein the film to be removed is a film of a material selected from the group consisting of Si, W, WSi, WN, Ta, TaN, Ta 2 O 5 , SiO 2 , BST (Barium Strontium Titanate), PZT (lead Zirconium Titanate) HfO 3 , La 2 O 3 , Pr 2 O 5  and Al 2 O 3 . 
   
   
       11 . The method according to  claim 7 , wherein the reduced pressure is 0.1 to 50 Torr. 
   
   
       12 . The method according to  claim 9 , wherein the plasma is selected from the group consisting of a microwave plasma, an inductively couplet plasma, and a thermal inductively couplet plasma, and wherein the reduced pressure is 0.1 to 50 Torr. 
   
   
       13 . The method according to  claim 12 , wherein the plasma is generated by using high-frequency power of 3 kw or above. 
   
   
       14 . A method of removing silicon oxide formed on a surface of a process vessel defining a film forming chamber or a surface of a member arranged in the film forming chamber, said method comprising the steps of:
 evacuating the film forming chamber to establish therein an atmosphere of a reduced pressure;   heating the surfaces at a predetermined temperature; and   supplying gases including an inert gas, NF 3  gas, and Cl 2  gas into the film forming chamber so that the gases react with silicon oxide to decompose the film.   
   
   
       15 . The method according to  claim 14 , further comprising the steps of:
 supplying the gases into a plasma generating chamber arranged remote from the film forming chamber; and   generating a plasma in the plasma generating chamber;   wherein the step of supplying gases into the film forming chamber includes a step of supplying the gases, having been converted into active species in the plasma generating chamber, into the film forming chamber.   
   
   
       16 . The method according to  claim 15 , wherein the plasma is selected from the group consisting of a microwave plasma, an inductively couplet plasma, and a thermal inductively couplet plasma, and wherein the reduced pressure is 0.1 to 50 Torr. 
   
   
       17 . The method according to  claim 16 , wherein the plasma is generated by using high-frequency power of 3 kw or above. 
   
   
       18 . A film forming apparatus comprising:
 a processing vessel defining a processing chamber, in which a substrate is subjected to a process;   a first gas supply system adapted to supply a first gas into the processing chamber;   a plasma generating system including a plasma generating vessel arranged remote from the processing vessel and defining a plasma generating chamber adapted to generate a plasma therein;   a second gas supply system adapted to supply a second gas into the plasma generating chamber; and   a plasma supply passage connecting the plasma generating chamber to the processing chamber in order to supply a plasma generated in the plasma generating chamber having an atmosphere containing the second process gas.   
   
   
       19 . The film forming apparatus according to  claim 18 , wherein the plasma generating system further includes:
 a microwave power source adapted to generate a microwave;   a radial-line-slot antenna arranged on the plasma generating vessel, the antenna having a form of a circular disk provided with the plurality of slots circumferentially arranged on concentric circles; and   a waveguide adapted to guide the microwave from the microwave power source to antenna.   
   
   
       20 . The film forming apparatus according to  claim 18 , wherein the first gas is a film-forming gas and the second gas is a cleaning gas. 
   
   
       21 . The film forming apparatus according to  claim 18 , wherein the plasma generating system includes a power source adapted to generate high-frequency power and to regulate the high-frequency power at a value of 3 kw or above.