Preparing nanoparticles and carbon nanotubes

Abstract

Apparatus and methods for forming the apparatus include nanoparticles, catalyst nanoparticles, carbon nanotubes generated from catalyst nanoparticles, and methods of fabrication of such nanoparticles and carbon nanotubes.

1 . A method comprising:
 depositing a film of a material on a substrate using a mask to form a pattern of the material on the substrate;   heating the deposited material and forming separated nanoparticles from the deposited material on the substrate within the pattern.   
     
     
         2 . The method of  claim 1 , wherein depositing the film of the material includes depositing a catalyst material that is capable of being used for forming a non-amorphous carbon structure. 
     
     
         3 . The method of  claim 2 , wherein depositing the catalyst material includes depositing a metal film, in which the metal is selected from one or any alloy or other combination of nickel, iron, cobalt, alloy of cobalt and platinum, alloy of iron and platinum, alloy of cobalt and molybdenum, alloy of iron and molybdenum, alloy of nickel and molybdenum, copper, and gold. 
     
     
         4 . The method of  claim 1 , wherein forming separated nanoparticles includes forming nanoparticles that have an effective diameter in a range from 0.1 nanometer to 100.0 nanometers. 
     
     
         5 . The method of  claim 1 , wherein depositing the film of the material includes depositing the film of the material on and in contact with a dielectric layer of the substrate. 
     
     
         6 . The method of  claim 1 , wherein depositing the film of the material includes depositing the film of the material on a substrate that includes one or more of silicon, sapphire, quartz, alumina, a silicate, a nitride, GaN, InN, AlN or Si 3 N 4 , germanium, tin, GaAs, InP, SiC, or ZnSe. 
     
     
         7 . A method comprising:
 depositing a film of a material on a substrate;   heating the deposited material and forming separated nanoparticles from the deposited material on the substrate;   generating a carbon feedstock gas flow along a surface of the substrate in a direction substantially parallel with the surface or at an angle to the surface; and   controlling the carbon feedstock gas flow to contact one or more of the nanoparticles to form a carbon nanotube including forming the carbon nanotube substantially parallel with the surface or at a projected angle to the surface.   
     
     
         8 . The method of  claim 7 , wherein the method includes using the carbon feedstock gas flow for elevating the carbon nanotube from the substrate during formation of the carbon nanotube. 
     
     
         9 . The method of  claim 7 , wherein the method includes growing carbon nanotubes on a single-crystal quartz substrate with orientation directed by ordered lattices of the single crystal quartz substrate to provide substantially parallel carbon nanotube arrays. 
     
     
         10 . The method of  claim 7 , wherein the method includes applying lithographic patterning to isolate individual nanoparticles having controlled sizes and separations at controlled locations prior to generating the carbon feedstock gas flow to form individual single-walled carbon nanotubes from the individual nanoparticles. 
     
     
         11 . The method of  claim 7 , wherein the method includes elevating an end of the substrate at which the carbon feedstock gas flow arrives, the elevating being with respect to an opposite end of the substrate at which the carbon feedstock gas flow departs. 
     
     
         12 . The method of  claim 7 , wherein forming the carbon nanotube includes forming a single-walled carbon nanotube. 
     
     
         13 . The method of  claim 12 , wherein the method includes controlling a length of time that the one or more nanoparticles are in contact with the carbon feedstock gas flow to control a length of the single-walled carbon nanotube. 
     
     
         14 . The method of  claim 12 , wherein forming the carbon nanotube includes forming the carbon nanotube with a diameter determined by controlling the water content in the carbon feedstock gas flow. 
     
     
         15 . The method of  claim 12 , wherein forming the single-walled carbon nanotube includes forming the single-walled carbon nanotube with an effective diameter determined by a thickness of the film of the material deposited. 
     
     
         16 . The method of  claim 12 , wherein generating a carbon feedstock gas flow includes regulating the carbon feedstock gas flow in a flow range to provide an ordered laminar flow. 
     
     
         17 . The method of  claim 12 , wherein generating a carbon feedstock gas flow includes generating a flow of water and an organic alcohol. 
     
     
         18 . The method of  claim 7 , wherein generating a carbon feedstock gas flow includes using a doping agent, the doping agent including one or more of acetonitrile, ammonia, or thiophen. 
     
     
         19 . The method of  claim 7 , wherein forming the carbon nanotube includes forming a single-walled carbon nanotube substantially free of amorphous carbon. 
     
     
         20 . The method of  claim 7 , wherein forming the carbon nanotube comprises forming a single-walled carbon nanotube as a component in an electronic device. 
     
     
         21 . An apparatus comprising:
 a substrate; and   a carbon nanotube disposed on the substrate according to a patterned configuration, the carbon nanotube being substantially free of amorphous carbon.   
     
     
         22 . The apparatus of  claim 21 , wherein the non-amorphous carbon nanotube contacts a metal nanoparticle at an end the non-amorphous carbon nanotube. 
     
     
         23 . The apparatus of  claim 21 , wherein the substrate includes one or more of silicon, sapphire, or quartz. 
     
     
         24 . The apparatus of  claim 21 , wherein the apparatus includes an array of non-amorphous carbon nanotubes. 
     
     
         25 . The apparatus of  claim 21 , wherein the non-amorphous carbon nanotube is disposed as a component of an integrated circuit on the substrate.