Tunable low loss material compositions and methods of manufacture and use therefore

Abstract

An embodiment of the present invention provides a method of making an electronically tunable dielectric material comprising mixing particles of at least one electronically tunable dielectric phase and particles of at least one compound of low loss complex perovskites, and particles of optional one other family of materials; and sintering the material.

1 . A method of making an electronically tunable dielectric material comprising:
 mixing particles of at least one electronically tunable dielectric phase and particles of at least one compound of low loss complex perovskites, and particles of optional one other family of materials; and   sintering said material.   
   
   
       2 . The method of  claim 1 , wherein the at least one electronically tunable dielectric phase is selected from barium strontium titanate, barium titanate, strontium titanate, barium calcium titanate, barium calcium zirconium titanate, lead titanate, lead zirconium titanate, lead lanthanum zirconium titanate, lead niobate, lead tantalate, potassium strontium niobate, sodium barium niobate/potassium phosphate, potassium niobate, lithium niobate, lithium tantalate, lanthanum tantalate, barium calcium zirconium titanate, sodium nitrate, and combinations thereof. 
   
   
       3 . The method of  claim 1 , wherein the compound of low loss complex perovskites comprises A[B11/3B22/3]O3 materials, where A=Ba, Sr or the combination of Ba and Sr; B1=Mg, Zn or the combination of Mg and Zn; B2=Ta, Nb or the combination of Ta and Nb. 
   
   
       4 . The method of  claim 1 , wherein the other family of materials can be from rare earth oxides, glasses, metal silicates, metal oxides and/or metal titanates. 
   
   
       5 . The method of  claim 1 , wherein the average particle sizes from about 0.001 to about 5 micron. 
   
   
       6 . A method of manufacturing a thin film electronically tunable dielectric material, comprising:
 depositing at least one electronically tunable dielectric phase and at least one compound of low loss non-tunable phase on a substrate.   
   
   
       7 . The method of  claim 6 , wherein in said depositing comprises at least one of mechanical, chemical and evaporation. 
   
   
       8 . The method of  claim 6 , wherein said depositing comprises at least one of RF sputtering, pulsed laser deposition, pulsed electron deposition, sol-gel processing, metal organic decomposition (MOD), and chemical vapor deposition (CVD). 
   
   
       9 . The method of  claim 6 , wherein said at least one electronically tunable dielectric phase is selected from barium strontium titanate, barium titanate, strontium titanate, barium calcium titanate, barium calcium zirconium titanate, lead titanate, lead zirconium titanate, lead lanthanum zirconium titanate, lead niobate, lead tantalate, potassium strontium niobate, sodium barium niobate/potassium phosphate, potassium niobate, lithium niobate, lithium tantalate, lanthanum tantalate, barium calcium zirconium titanate, sodium nitrate, and combinations thereof. 
   
   
       10 . The method of  claim 6 , wherein said compound of low loss non-tunable phase comprises complex perovskite A[B11/3B22/3]O3 materials, where A=Ba, Sr or the combination of Ba and Sr; B 1=Mg, Zn or the combination of Mg and Zn; B2=Ta, Nb or the combination of Ta and Nb. 
   
   
       11 . The method of  claim 6 , further comprising including in said compound another family of materials selected from the group consisting of: rare earth oxides, glasses, metal silicates, metal oxides and/or metal titanates. 
   
   
       12 . An electronically tunable dielectric material, comprising:
 at least one electronically tunable dielectric phase; and   at least one compound of low loss non-tunable phase on a substrate.   
   
   
       13 . The electronically tunable dielectric material of  claim 12 , wherein said at least one compound of low loss non-tunable phase is at least one compound of low loss complex perovskites which comprises A[B11/3B22/3]O3 materials, where A=Ba, Sr or the combination of Ba and Sr; B 1=Mg, Zn or the combination of Mg and Zn; B2=Ta, Nb or the combination of Ta and Nb. 
   
   
       14 . An electronically tunable dielectric material, comprising:
 at least one electronically tunable dielectric phase; and   at least one other family of materials including rare earth oxides.   
   
   
       15 . The electronically tunable dielectric material of  claim 14 , wherein said at least one other family of materials is selected from the group consisting of:
 rare earth oxides, glasses, metal silicates, metal oxides or metal titanates.   
   
   
       16 . The electronically tunable dielectric material of  claim 14 , wherein said rare earth oxides comprise the oxides of scandium (Sc), yttrium (Y), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu) and any combination of the above. 
   
   
       17 . The electronically tunable dielectric material of  claim 14 , wherein said rare earth oxides comprise the oxide of Sc, Y, La, Ce, Pr, Nd, Sm, Dy, Gd, Ho or Er and further comprise CeO2. 
   
   
       18 . The electronically tunable dielectric material of  claim 14 , wherein the percentage of said rare earth oxides may comprise from about 0.001 to about 5 mole percent of the electronically tunable dielectric phase. 
   
   
       19 . The electronically tunable dielectric material of  claim 14 , wherein the percentage of said rare earth oxides may comprise from about 0.01 to about 3 mole percent of the electronically tunable dielectric phase. 
   
   
       20 . The electronically tunable dielectric material of  claim 14 , wherein the percentage of said rare earth oxides may comprise from about 0.1 to about 2 mole percent of the electronically tunable dielectric phase.