Semiconductor device

Abstract

In a high-voltage semiconductor switching element, in addition to a first emitter region that is necessary for switching operations, a second emitter region, which is electrically connected with the first emitter region through a detection resistor in current detection means and is electrically connected with the current detection means, is formed. No emitter electrode is formed on the second emitter region, while an emitter electrode is formed on a part of a base region that is adjacent to the second emitter region.

1 . A semiconductor device comprising:
 a high-voltage semiconductor switching element controlled by a gate voltage applied to a gate electrode; and   current detection means including a detection resistor capable of detecting part of current flowing through the high-voltage semiconductor switching element,   wherein the high-voltage semiconductor switching element includes:
 a base region of a second conductivity type formed in a semiconductor substrate of a first conductivity type; 
 a first emitter region of the first conductivity type formed in the base region; 
 a collector region of the second conductivity type formed in the semiconductor substrate so as to be spaced apart from the base region; 
 a gate insulating film formed at least on a part of the base region located closer to the collector region with respect to the first emitter region; 
 a gate electrode formed on the gate insulating film; 
 a collector electrode formed above the semiconductor substrate and electrically connected with the collector region; and 
 an emitter electrode formed above the semiconductor substrate and electrically connected with both the base region and the first emitter region; 
   a second emitter region, which is electrically connected with the first emitter region through the detection resistor and is electrically connected with the current detection means, is also formed in the base region; and   the emitter electrode is not formed on the second emitter region, while the emitter electrode is formed on a part of the base region that is adjacent to the second emitter region.   
   
   
       2 . The semiconductor device of  claim 1 , wherein the semiconductor substrate is of the second conductivity type;
 the semiconductor device further includes a drift region of the first conductivity type formed in the semiconductor substrate so as to be adjacent to the base region;   the first emitter region and the second emitter region are spaced apart from the drift region; and   the collector region is formed in the drift region.   
   
   
       3 . A semiconductor device comprising:
 a high-voltage semiconductor switching element controlled by a gate voltage applied to a gate electrode; and   current detection means including a detection resistor capable of detecting part of current flowing through the high-voltage semiconductor switching element,   wherein the high-voltage semiconductor switching element includes:
 a base region of a second conductivity type formed in a semiconductor substrate of a first conductivity type; 
 a first emitter/source region of the first conductivity type formed in the base region; 
 a collector region of the second conductivity type formed in the semiconductor substrate so as to be spaced apart from the base region; 
 a drain region of the first conductivity type formed in the semiconductor substrate so as to be spaced apart from the base region; 
 a gate insulating film formed at least on a part of the base region located closer to the collector region with respect to the first emitter/source region; 
 a gate electrode formed on the gate insulating film; 
 a collector/drain electrode formed above the semiconductor substrate and electrically connected with the collector region and the drain region; and 
 an emitter/source electrode formed above the semiconductor substrate and electrically connected with both the base region and the first emitter/source region; 
   a second emitter/source region, which is electrically connected with the first emitter/source region through the detection resistor and is electrically connected with the current detection means, is also formed in the base region; and   the emitter/source electrode is not formed on the second emitter/source region, while the emitter/source electrode is formed on a part of the base region that is adjacent to the second emitter/source region.   
   
   
       4 . The semiconductor device of  claim 3 , wherein the semiconductor substrate is of the second conductivity type;
 the semiconductor device further includes a drift region of the first conductivity type formed in the semiconductor substrate so as to be adjacent to the base region;   the first emitter/source region and the second emitter/source region are spaced apart from the drift region; and   the collector region and the drain region are formed in the drift region.   
   
   
       5 . The semiconductor device of  claim 3 , wherein the collector region and the drain region each include a plurality of separate parts; and
 each part of the collector region and each part of the drain region are located alternately so as to be in contact with each other in a direction perpendicular to a direction going from the collector region to the first emitter/source region.   
   
   
       6 . The semiconductor device of  claim 5 , wherein the second emitter/source region and the collector region are located so as to face each other with a part of the base region interposed therebetween. 
   
   
       7 . The semiconductor device of  claim 5 , wherein the second emitter/source region and the drain region are located so as to face each other with a part of the base region interposed therebetween.