Solution-Processed Organic Electronic Structural Element with Improved Electrode Layer

Abstract

A solution-processed organic electronic structural element has an improved electrode layer. Located between the active organic layer and the electrode layer there is either an interface or an interlayer containing a cesium salt.

1 . A solution-processed organic electronic structural element comprising a substrate, at least two single-layer or multilayer electrodes, between them at least one active organic semiconductive layer and between an electrode layer and an active organic semiconductive layer an intermediate layer or an interface, wherein a cesium salt of an organic mono-, oligo- and polycarboxylic or sulfonic acid is contained as an n-dopant in the intermediate layer/the interface. 
   
   
       2 . The structural element according to  claim 1 , wherein the cesium salt is at least one compound selected from the group of structure types consisting of:
 monocarboxylic acids:   
     
       
         
         
             
             
         
       
       alkane sulfonic acids: 
     
     
       
         
         
             
             
         
       
       dicarboxylic acids: 
     
     
       
         
         
             
             
         
       
       disulfonic acids: 
     
     
       
         
         
             
             
         
       
       polymer-bound carboxylic acids: 
     
     
       
         
         
             
             
         
       
       and polymer-bound sulfonic acids 
     
     
       
         
         
             
             
         
       
     
     wherein R stands for alkyl (C 1 -C 20  normal, branched, saturated or unsaturated and/or hydroxy-substituted), phenyl (alkylated and/or hydroxy- and/or alkoxy-substituted) and/or pyridyl, 
     R 1  stands for alkylene (C 2 -C 20  normal, branched, saturated or unsaturated and hydroxy-substituted), 1,2-phenylene, 1,3-phenylene 1,4-phenylene or 2,6-pyridylen, 
     n and m stand for any commercially available degrees of polymerization of the precursor materials. 
   
   
       3 . The structural element according to  claim 1 , wherein the intermediate layer/the interface, which contains the cesium salt, is applied solution-processed. 
   
   
       4 . The structural element according to  claim 1 , wherein the intermediate layer/the interface containing the cesium salt is vacuum deposited. 
   
   
       5 . The structural element according to  claim 1 , wherein the intermediate layer/the interface containing the cesium salt has a thickness in the range between 0.1 nm and 15 nm. 
   
   
       6 . The structural element according to  claim 1 , wherein the intermediate layer/the interface containing the cesium salt has a thickness in the range between 3 nm and 5 nm. 
   
   
       7 . The structural element according to  claim 1 , wherein the intermediate layer/the interface has a thickness of less than 15 nm. 
   
   
       8 . The structural element according to  claim 1 , wherein the intermediate layer/the interface has a thickness of less than 10 nm. 
   
   
       9 . A solution-processed organic electronic structural element comprising a substrate, at least two single-layer or multilayer electrodes, between them at least one active organic semiconductive layer and between an electrode layer and an active organic semiconductive layer an intermediate layer and an interface, wherein a cesium salt of an organic mono-, oligo- and polycarboxylic or sulfonic acid is contained as an n-dopant in the intermediate layer and interface. 
   
   
       10 . The structural element according to  claim 9 , wherein the cesium salt is at least one compound selected from the group of structure types consisting of:
 monocarboxylic acids:   
     
       
         
         
             
             
         
       
       alkane sulfonic acids: 
     
     
       
         
         
             
             
         
       
       dicarboxylic acids: 
     
     
       
         
         
             
             
         
       
       disulfonic acids: 
     
     
       
         
         
             
             
         
       
       polymer-bound carboxylic acids: 
     
     
       
         
         
             
             
         
       
       and polymer-bound sulfonic acids 
     
     
       
         
         
             
             
         
       
     
     wherein R stands for alkyl (C 1 -C 20  normal, branched, saturated or unsaturated and/or hydroxy-substituted), phenyl (alkylated and/or hydroxy- and/or alkoxy-substituted) and/or pyridyl, 
     R 1  stands for alkylene (C 2 -C 20  normal, branched, saturated or unsaturated and hydroxy-substituted), 1,2-phenylene, 1,3-phenylene 1,4-phenylene or 2,6-pyridylen, 
     n and m stand for any commercially available degrees of polymerization of the precursor materials. 
   
   
       11 . The structural element according to  claim 9 , wherein the intermediate layer and interface, which contains the cesium salt, is applied solution-processed. 
   
   
       12 . The structural element according to  claim 9 , wherein the intermediate layer and interface containing the cesium salt is vacuum deposited. 
   
   
       13 . The structural element according to  claim 9 , wherein the intermediate layer and interface containing the cesium salt has a thickness in the range between 0.1 nm and 15 nm. 
   
   
       14 . The structural element according to  claim 9 , wherein the intermediate layer/the interface containing the cesium salt has a thickness in the range between 3 nm and 5 nm. 
   
   
       15 . The structural element according to  claim 9 , wherein the intermediate layer/the interface has a thickness of less than 15 nm. 
   
   
       16 . The structural element according to  claim 9 , wherein the intermediate layer/the interface has a thickness of less than 10 nm.