Cross flow cvd reactor

Abstract

A cross flow chemical vapor deposition chamber can comprise an inlet duct having a generally rectangular cross-section and an outlet duct having a generally rectangular cross-section. The rectangular inlet duct and the rectangular outlet duct can facilitate laminar flow of reactant gases over a susceptor. Movable partitions can be configured to define a plurality of zones within the chamber. Each zone can contain a different reactant gas, concentration of reactant gas, and/or flow rate of reactant gas. Enhanced laminar flow can be provided, undesirable depletion of reactant gas can be mitigated, and enhanced control of reactant gases can be facilitated.

1 . A chemical vapor deposition reactor comprising:
 a chamber having a generally circular cross-section;   a susceptor disposed within the chamber;   an inlet duct having a generally rectangular cross-section; and   an outlet duct having a generally rectangular cross-section.   
   
   
       2 . The chemical vapor deposition reactor as recited in  claim 1 , wherein the chamber, the inlet duct, and the outlet duct cooperate to provide generally laminar flow of reactant gases over the susceptor. 
   
   
       3 . The chemical vapor deposition reactor as recited in  claim 1 , wherein the inlet duct and the outlet duct outlet duct are welded to the chamber. 
   
   
       4 . The chemical vapor deposition reactor as recited in  claim 1 , wherein an upper surface of a lower wall of the inlet duct and an upper surface of a lower wall of the outlet duct outlet duct are approximately level with an upper surface of the susceptor. 
   
   
       5 . The chemical vapor deposition reactor as recited in  claim 1 , wherein a gap between a lower wall of the inlet duct and the upper surface of the susceptor is less than 2 millimeters and a gap between a lower wall of the outlet duct outlet duct and an upper surface of the susceptor is less than approximately 2 millimeters. 
   
   
       6 . A chemical vapor deposition reactor comprising:
 a chamber;   a lid configured to seal the chamber; and   at least one movable partition configured to define a plurality of zones within the chamber.   
   
   
       7 . The chemical vapor deposition reactor as recited in  claim 6 , wherein the lid comprises a drilled shower head. 
   
   
       8 . The chemical vapor deposition reactor as recited in  claim 6 , wherein the lid comprises a drilled shower head and the zones receive reactant gas from the shower head, each zone being configured to receive a different reactant gas, concentration of reactant gas, and/or flow rate of reactant gas and wherein the reactant gas(es) of each zone do not substantially mix with one another. 
   
   
       9 . The chemical vapor deposition reactor as recited in  claim 6 , further comprising a plurality of slots within which the partition(s) is/are positionable. 
   
   
       10 . The chemical vapor deposition reactor as recited in  claim 6 , further comprising a plurality of slots within which the partition(s) is/are positionable, the slots being generally evenly spaced with respect to one another. 
   
   
       11 . The chemical vapor deposition reactor as recited in  claim 6 , further comprising a plurality of slots within which the partition(s) is/are positionable, the slots being unevenly spaced with respect to one another. 
   
   
       12 . The chemical vapor deposition reactor as recited in  claim 6 , further comprising a plurality of slots within which the partition(s) is/are positionable, wherein slots closer to a laminar flow reaction gas inlet are spaced closer to one another than slots farther from the inlet. 
   
   
       13 . The chemical vapor deposition reactor as recited in  claim 6 , further comprising two rails, the rails being generally parallel with respect to one another and having a plurality of slots formed therein such that ends of the partitions can be disposed within the slots and the partitions can be disposed between the rails. 
   
   
       14 . The chemical vapor deposition reactor as recited in  claim 6 , wherein partition(s) are generally rectangular partitions. 
   
   
       15 . The chemical vapor deposition reactor as recited in  claim 6 , wherein partition(s) are generally planar partitions. 
   
   
       16 . The chemical vapor deposition reactor as recited in  claim 6 , wherein partition(s) are non-planar partitions. 
   
   
       17 . The chemical vapor deposition reactor as recited in  claim 6 , wherein partition(s) are curved partitions. 
   
   
       18 . A chemical vapor deposition system comprising:
 a chamber having generally circular cross-section;   a susceptor disposed within the chamber;   an inlet duct having a generally rectangular cross-section;   an outlet duct having a generally rectangular cross-section;   a group V reactant gas supply configured to provide group V reactant gas to the inlet duct;   a lid configured to seal the chamber;   at least one movable partition configured to define a plurality of zones within the chamber; and   a group III reactant gas supply configured to provide group III reactant gas to the zones, wherein the flow of group III reactant gas is individually controllable for each zone.   
   
   
       19 . A method for performing chemical vapor deposition, the method comprising:
 moving a reactant gas into a chamber from an inlet duct having a generally rectangular cross-section;   moving the reactant gas over a susceptor; and   moving the reactant gas out of the chamber into an outlet duct having a generally rectangular cross-section.   
   
   
       20 . A method for performing chemical vapor deposition, the method comprising:
 separating reactant gases from one another via at least one movable partition that is configured to define a plurality of zones within a chemical vapor deposition chamber; and   injecting the separated gases into respective zones of the chamber.   
   
   
       21 . A method for performing chemical vapor deposition, the method comprising:
 moving a first reactant gas into a chamber from an inlet duct having a generally rectangular cross-section;   moving the first reactant gas over a susceptor;   moving gas out of the chamber into an outlet duct having a generally rectangular cross-section;   separating a plurality of second reactant gases from one another via at least one movable partition that is configured to define a plurality of zones within a chemical vapor deposition chamber; and   injecting the separated second reactant gases into respective zones of the chamber.   
   
   
       22 . A chemical vapor deposition system comprising:
 means for moving a reactant gas into a chamber from an inlet duct having a generally rectangular cross-section;   means for moving the reactant gas over a susceptor; and   means for moving the reactant gas out of the chamber into an outlet duct having a generally rectangular cross-section.   
   
   
       23 . A chemical vapor deposition system comprising:
 means for separating reactant gases from one another so as to define a plurality of zones within a chemical vapor deposition chamber; and   means for injecting the separated gases into respective zones of the chamber.   
   
   
       24 . A lid for a chemical vapor deposition chamber, the lid comprising at least one movable partition that can be configured to define a plurality of reaction gas zones within the chamber. 
   
   
       25 . An LED made by a process comprising:
 moving a reactant gas into a chamber from an inlet duct having a generally rectangular cross-section;   moving the reactant gas over a susceptor; and   moving the reactant gas out of the chamber into an outlet duct having a generally rectangular cross-section.   
   
   
       26 . An LED made by a process comprising:
 separating reactant gases from one another via at least one movable partition that is configured to define a plurality of zones within a chemical vapor deposition chamber; and   injecting the separated gases into respective zones of the chamber.