Monolithic White Light-Emitting Diode

Abstract

The invention relates to a device comprising a matrix made of III-V nitride, said matrix comprising at least an active first portion through which an electrical current passes and at least a passive second portion through which no electrical current passes, said matrix comprising at least a first zone forming a first quantum confinement region made of a III-V nitride, said first zone being positioned in said active first portion, and at least a second zone forming a second quantum confinement region made of III-V nitride, characterized in that said second zone is positioned to said passive portion of said matrix.

1 . A device comprising a matrix made of III-V nitride, said matrix comprising at least an active first portion through which an electric current passes and at least a passive second portion through which no electric current passes, said matrix comprising at least a first zone forming a first stack of quantum wells or planes of quantum dots of III-V nitride, said first zone being positioned in said active first portion and at least a second zone comprising a second stack of quantum wells or planes of quantum dots of III-V nitride, said second zone is positioned in said massive portion of said matrix. 
   
   
       2 . A device according to  claim 1 , wherein said at least first zone is able to emit photons at least a first wavelength through an electric injection by said current passing in said active zone, said at least first wavelength being determined by the dimensions of said first stack of quantum wells or planes of quantum dots of III-V nitride and the composition of said first stack of quantum wells or planes of quantum dots of III-V nitride. 
   
   
       3 . A device according to  claim 2 , wherein said at least second zone is able to emit photons at least a second wavelength through an optical pumping by said photons emitted by said first zone, said at least second wavelength being determined by the dimensions of said second stack of quantum wells or planes of quantum dots of III-V nitride and the composition of said second stack of quantum wells or planes of quantum dots of III-V nitride. 
   
   
       4 . A device according to  claim 3 , wherein said at least first zone and said at least second zone are selected so that the combination of the light signal corresponding to the photons at said at least one first wavelength and of the second light signal corresponding to the photons at said at least one second wavelength diffuses a white light. 
   
   
       5 . A device according to  claim 1 , wherein said at least one first zone is able to emit photons in the blue through an electric injection by said current passing in said active zone. 
   
   
       6 . A device according to  claim 5 , wherein said at least one second zone is able to emit photons in the yellow through an optical pumping by said photons emitted by said first zone. 
   
   
       7 . A device according to  claim 5 , wherein said at least one second zone is able to emit photons in the green and in the red through an optical pumping by said photons emitted by said first zone. 
   
   
       8 . A device according to  claim 1 , wherein said first zone comprises a stack of quantum wells of the InGaN/GaN type. 
   
   
       9 . A device according to  claim 1 , wherein said second zone comprises a stack of planes of quantum dots of the GaN/AlN type. 
   
   
       10 . A light-emitting diode comprising a device made of III-V nitride, and means for generating electric said current, said current generating means being arranged as to define an active first portion through which said electric current passes and an passive second portion through which no electric current passes.