Grinding apparatus and method of grinding wafer

Abstract

In order not to transmit an impact when grinding is started, or micro-vibrations of a grinding wheel during grinding to a wafer, a grinding apparatus at least includes: a chuck table that holds a wafer; a grinding unit having a grinding wheel configured to include a grinding wheel part that is fixed to a wheel base and grinds a wafer held on the chuck table and having a wheel mount that supports the wheel base; and a grinding unit feeding unit that brings the grinding unit dose to and away from the chuck table, wherein a vibration damping rubber having a rebound resilience of 2% to 4% standardized by ISO 4662 is provided between the wheel base and the wheel mount, whereby an impact when grinding is started, or micro-vibrations of a grinding wheel during grinding are absorbed.

1 . A grinding apparatus at least comprising:
 a chuck table that holds a wafer;   a grinding unit having a grinding wheel configured to include a grinding wheel part that is fixed to a wheel base and grinds a wafer held on the chuck table and having a wheel mount that supports the wheel base; and   a grinding unit feeding unit that brings the grinding unit close to and away from the chuck table,   wherein a vibration damping rubber having a rebound resilience of 2% to 4% standardized by ISO 4662 is provided between the wheel base and the wheel mount.   
   
   
       2 . A method of grinding a wafer in which the grinding apparatus according to  claim 1  is used to grind a wafer, the method comprising the steps of:
 holding a wafer on the chuck table as a back surface of the wafer is exposed;   rotating the chuck table; and   feeding the grinding unit for grinding by the grinding unit feeding unit while the grinding wheel is rotated, and bringing the grinding wheel into contact with the back surface of the wafer to grind the back surface.   
   
   
       3 . The method of grinding a wafer according to  claim 2 , wherein a feed speed of the grinding unit by the grinding unit feeding unit is 0.1 mm/sec. to 15 mm/sec., a rotating speed of the chuck table is 10 rpm to 400 rpm, and a rotating speed of the grinding wheel is 1000 rpm to 7200 rpm. 
   
   
       4 . The method of grinding a wafer according to  claim 2 , wherein on a front surface of the wafer, a plurality of devices is formed as the devices are defined by streets, and
 a protective member is bonded to on the front surface, and the protective member is held on the chuck table.   
   
   
       5 . The method of grinding a wafer according to  claim 2 , wherein the wafer is a silicon wafer. 
   
   
       6 . The method of grinding a wafer according to  claim 3 , wherein the wafer is a silicon wafer. 
   
   
       7 . The method of grinding a wafer according to  claim 4 , wherein the wafer is a silicon wafer.