Chemical vapor deposition reactor having multiple inlets

Abstract

A chemical vapor deposition reactor has a wafer carrier which cooperates with a chamber of the reactor to facilitate laminar flow of reaction gas within the chamber and a plurality of injectors configured in flow controllable zones so as to mitigate depletion.

1 . A chemical vapor deposition reactor system comprising:
 a plurality of chambers;   a rotatable wafer carrier disposed within each of the chambers; and   a common reactant gas supply configured to controllably provide substantially the same gas mixture to each chamber independently of each other.   
   
   
       2 . The chemical vapor deposition reactor system as recited in  claim 1 , further comprising a common gas exhaust system for the chambers. 
   
   
       3 . The chemical vapor deposition reactor system as recited in  claim 1 , further comprising gas flow controllers that facilitate control of an amount of gas provided to the chambers. 
   
   
       4 . The chemical vapor deposition reactor system as recited in  claim 1 , wherein gas is supplied to the chambers simultaneously. 
   
   
       5 . The chemical vapor deposition reactor system as recited in  claim 3 , wherein the amount of gas provided to the chambers is different for each chamber. 
   
   
       6 . The chemical vapor deposition reactor system as recited in  claim 2 , wherein each chamber further comprises a narrow flow channel formed intermediate the chamber and the wafer carrier, a gas inlet located at a top of the chamber, a gas exit above the wafer carrier, a sealing ring around the wafer carrier to facilitate flow laminarly to the exhaust system and to define a heater chamber. 
   
   
       7 . The chemical vapor deposition reactor system as recited in  claim 1 , wherein each chamber is a comparatively small chamber. 
   
   
       8 . The chemical vapor deposition reactor system as recited in  claim 1 , wherein each chamber defines a seven wafer reactor. 
   
   
       9 . A chemical vapor deposition reactor comprising:
 a chamber containing a rotatable wafer carrier; wherein generally laminar flow of gas is effected intermediate a portion of the chamber and the wafer carrier wherein the wafer carrier and the chamber cooperate to define a generally flat, continuous and unobstructed flow channel;   a ring diffuser disposed proximate a periphery of the wafer carrier wherein laminar flow is enhanced from a reaction gas inlet formed generally centrally in the chamber to the ring diffuser; and   a ring seal, wherein the ring seal is disposed around the rotatable wafer carrier to bridge the flow channel.   
   
   
       10 . The reactor as recited in  claim 9 , wherein the chamber is defined by a cylinder. 
   
   
       11 . The reactor as recited in  claim 9 , wherein the ring diffuser is comprised of at least one of SiC coated graphite, SiC quartz, or molybdenum. 
   
   
       12 . The reactor as recited in  claim 9 , wherein:
 a reaction gas inlet is formed generally centrally in the chamber;   a plurality of reaction gas outlets are formed in the chamber;   the wafer carrier is disposed within the chamber below the gas outlets so as to define a flow channel intermediate a top of the chamber and the wafer carrier such that reaction gas flows into the chamber through the reaction gas inlet, through the chamber via the flow channel, and out of the chamber via the reaction gas outlet; and   the ring diffuser further comprises:
 a substantially hollow annulus having an inner surface and an outer surface; 
 a plurality of openings formed in the inner surface; 
 a plurality of openings formed in the outer surface; and 
 wherein openings in the inner surface enhance uniformity of reaction gas flow over the wafer carrier. 
   
   
   
       13 . A chemical vapor deposition reactor comprising:
 a plurality of reactor chambers;   a common gas supply adapted to provide reaction gases to the chambers;   gas controllers individually controlling amounts of components of the reaction gases directly provided to each of the chambers independently from each other; and   a common gas exhaust system for removing gases from the chambers.   
   
   
       14 . The reactor as recited in  claim 13 , further comprising supporting less than twelve wafers upon a wafer carrier disposed within each chamber. 
   
   
       15 . The reactor system as recited in  claim 13 , wherein each chamber further comprises a narrow flow channel formed intermediate the chamber and a wafer carrier, a gas inlet located at a top of the chamber, a gas exit above the wafer carrier, a sealing ring around the wafer carrier to facilitate flow laminarly to the exhaust system and to define a heater chamber. 
   
   
       16 . The reactor as recited in  claim 15 , wherein the ring seal further comprises at least one of graphite, quartz, and SiC.