Transistor including an active region and methods for fabricating the same

Abstract

A transistor including an active region and methods thereof. The active region may include corners with at least one of a rectangular, curved or rounded shape. The methods may include isotropically etching at least a portion of the active region such that the portion includes a desired shape.

1 - 37 . (canceled) 
   
   
       38 . A transistor, comprising:
 an active region formed on a semiconductor substrate, at least one portion of the active region including a desired shape.   
   
   
       39 . The transistor of  claim 38 , wherein the transistor is a recessed channel metal oxide semiconductor (MOS) transistor. 
   
   
       40 . The transistor of  claim 38 , wherein the desired shape is at least one of a curved shape and a rectangular shape. 
   
   
       41 . The transistor of  claim 38 , wherein the at least one portion includes an edge of the active region. 
   
   
       42 . The transistor of  claim 41 , wherein the edge is between adjacent sidewalls of the active region. 
   
   
       43 . The transistor of  claim 41 , wherein the edge is between a sidewall of the active region and a surface of the active region, the surface not being located within an isolation trench. 
   
   
       44 . The transistor of  claim 38 , wherein the portion is a corner. 
   
   
       45 . The transistor of  claim 44 , wherein the corner is between adjacent sidewalls of the active region. 
   
   
       46 . A method of fabricating the transistor of  claim 38 .