Method For Producing A Semiconductor Wafer With A Polished Edge

Abstract

The invention relates to a method for producing a semiconductor wafer with a polished edge, said method comprising the following steps: a polishing of at least one side of the semiconductor wafer, and a polishing of the edge of the polished semiconductor wafer, wherein the edge is polished in the presence of a polishing agent by means of a polishing cloth containing fixed abrasive.

1 . A method for producing a semiconductor wafer with a polished edge, comprising
 polishing at least one side of the semiconductor wafer;   polishing the edge of the polished semiconductor wafer,   
     wherein the edge is polished in the presence of a polishing agent by means of a polishing cloth containing fixed abrasive. 
   
   
       2 . The method of  claim 1 , wherein the polishing agent contains free abrasive. 
   
   
       3 . The method of  claim 1 , wherein the polishing of at least one side of the semiconductor wafer comprises a double-side polishing. 
   
   
       4 . The method of  claim 3 , wherein the polishing of at least one side of the semiconductor wafer comprises double-side polishing and a single-side polishing performed thereafter. 
   
   
       5 . The method of  claim 4 , comprising a further polishing of the edge, wherein the previously polished edge of the polished semiconductor wafer is further polished in the presence of a slurry containing free abrasive by means of a polishing cloth containing no fixed abrasive. 
   
   
       6 . The method of  claim 5 , wherein the fixed abrasive in the polishing cloth has a mesh size of 1000 to 2000. 
   
   
       7 . The method of  claim 1 , wherein the fixed abrasive in the polishing cloth has a mesh size of not less than 4000. 
   
   
       8 . The method of  claim 4 , wherein the single-side polishing is carried out after the polishing of the edge. 
   
   
       9 . The method of  claim 5 , wherein single-side polishing is carried out after the further polishing of the edge. 
   
   
       10 . The method of  claim 4 , wherein single-side polishing is carried out before the polishing of the edge. 
   
   
       11 . The method of  claim 5 , wherein single-side polishing is carried out before the polishing of the edge, and the further polishing of the edge is carried out after the initial polishing of the edge. 
   
   
       12 . The method of  claim 1 , further comprising the deposition of an epitaxial layer on the polished side of the semiconductor wafer with a polished edge.