Electroconductive thick film composition(s), electrode(s), and semiconductor device(s) formed therefrom

Abstract

The present invention is directed to an electroconductive thick film composition comprising: (a) electroconductive metal particles selected from (1) Al, Cu, Au, Ag, Pd and Pt; (2) alloy of Al, Cu, Au, Ag, Pd and Pt; and (3) mixtures thereof; (3) glass frit wherein said glass frit is Pb-free; dispersed in (d) an organic medium, and wherein the average diameter of said electroconductive metal particles is in the range of 0.5-10.0 μm. The present invention is further directed to an electrode formed from the composition as detailed above and a semiconductor device(s) (for example, a solar cell) comprising said electrode.

1 - 10 . (canceled) 
     
     
         11 . A thick film conductive composition comprising:
 (a) electroconductive metal particles consisting essentially of Ag particles,   (b) glass frit wherein said glass frit is Pb-free; dispersed in   (c) an organic medium, and
 wherein the average diameter of said electro conductive metal particles is in the range of 0.5-10.0 μm, 
   
       wherein said glass frit comprises, in weight percent total glass frit composition: SiO 2  0.5-35, Al 2 O 3  0-5, B 2 O 3  1-15, ZnO 0-15, and Bi 2 O 3  55-90. 
     
     
         12 . A thick film conductive composition comprising:
 (a) electroconductive metal particles selected from the group consisting of Ag particles and Al particles and mixtures thereof,   (b) glass frit wherein said glass frit is Pb-free;   (c) one or more inorganic additives, wherein said inorganic additives are selected from the group consisting of (1) Cu and Bi; (2) compounds that can generate elemental metals selected from Cu and Bi; (3) oxides of Cu and Bi; and (4) mixtures thereof; dispersed in   (d) an organic medium.   
     
     
         13 . An electrode formed from the composition of  claim 11  or  claim 12  wherein said composition has been fired to remove the organic medium and sinter said glass frit. 
     
     
         14 . A semiconductor device comprising the electrode of  claim 13 .