Method for polishing a workpiece

Abstract

A polishing apparatus can supply a polishing liquid uniformly and efficiently to a surface to be polished of a workpiece. The polishing apparatus includes a polishing table having a polishing surface, and a top ring for holding a semiconductor wafer and pressing the semiconductor wafer against the polishing surface. The polishing apparatus also includes a polishing liquid supply port for supplying a polishing liquid to the polishing surface, and a moving mechanism for moving the polishing liquid supply port to distribute the polishing liquid uniformly over an entire surface of the workpiece due to relative movement of the workpiece and the polishing surface.

1 - 70 . (canceled) 
   
   
       71 . A method for polishing a workpiece, the method comprising the steps of:
 polishing the workpiece to remove a substantial portion of a first film formed on the workpiece by pressing the workpiece against a polishing surface while supplying a polishing liquid to the polishing surface from a polishing liquid nozzle in a first-stage polishing;   polishing the workpiece to remove a remaining portion of the first film until a second film on the workpiece is exposed in a second-stage polishing, leaving an interconnect area;   presetting a film thickness distribution for the first film upon transition from said first-stage polishing to said second-stage polishing;   measuring a thickness of said first film with a film thickness sensor in said first-stage polishing to acquire a film thickness distribution of said first film; and   adjusting polishing conditions in said first-stage polishing to equalize the acquired film thickness distribution of said first film to the preset film thickness distribution for the first film.   
   
   
       72 . A method according to  claim 71 , wherein said first-stage polishing is switched to said second-stage polishing when the acquired film thickness distribution of said first film is equalized to the preset film thickness distribution for the first film. 
   
   
       73 . A method according to  claim 71 , wherein said adjusting polishing conditions in said first-stage polishing is carried out by adjusting polishing liquid supply conditions for supplying the polishing liquid to the polishing surface. 
   
   
       74 . A method according to  claim 71 , wherein said film thickness sensor is an eddy current sensor. 
   
   
       75 . A method according to  claim 71 , wherein said film thickness sensor is an optical sensor. 
   
   
       76 . A method according to  claim 73 , wherein said adjusting polishing liquid supply condition is carried out by varying a moving speed of said polishing liquid supply nozzle while said polishing liquid supply nozzle is being moved. 
   
   
       77 . A method according to  claim 76 , wherein said polishing liquid supply nozzle is moved such that said polishing liquid supply nozzle moves at least one of a pivoting motion, a reciprocating motion, a rotational motion, and a liner motion. 
   
   
       78 . A method according to  claim 76 , wherein said polishing liquid supply nozzle has a plurality of polishing liquid supply ports. 
   
   
       79 . A method according to  claim 76 , wherein said polishing liquid supply nozzle extends in a radial direction of said polishing surface. 
   
   
       80 . A method according to  claim 76 , wherein said polishing liquid supply nozzle is inclined a predetermined angle to a radial direction of said polishing surface. 
   
   
       81 . A method according to  claim 73 , wherein said adjusting polishing liquid supply condition is carried out by controlling a rate of the polishing liquid supplied from said polishing liquid supply nozzle to said polishing surface. 
   
   
       82 . A method according to  claim 79 , wherein said polishing liquid supply nozzle has a plurality of polishing liquid supply ports and rates of the polishing liquid supplied from said polishing liquid supply ports to said polishing surface are individually controlled. 
   
   
       83 . A method for polishing a workpiece, the method comprising:
 polishing the workpiece to remove a film formed on the workpiece by pressing the workpiece against a polishing surface while supplying a polishing liquid to the polishing surface from a polishing liquid nozzle;   presetting a film thickness distribution for the film;   measuring a thickness of the film with a film thickness sensor to acquire a film thickness distribution of the film during polishing of the film;   simulating polishing conditions to achieve the preset film thickness distribution for the film by comparing the acquired film thickness distribution of the film and the preset film thickness distribution for the film with each other; and   adjusting polishing condition of the film based on the simulated polishing conditions.   
   
   
       84 . A method according to  claim 83 , wherein said adjusting polishing condition is carried out by adjusting polishing liquid supply conditions for supplying the polishing liquid to the polishing surface. 
   
   
       85 . A method according to  claim 83 , wherein said film thickness sensor is an eddy current sensor. 
   
   
       86 . A method according to  claim 83 , wherein said film thickness sensor is an optical sensor. 
   
   
       87 . A method according to  claim 84 , wherein said adjusting polishing liquid supply condition is carried out by varying a moving speed of said polishing liquid supply nozzle while said polishing liquid supply nozzle is being moved. 
   
   
       88 . A method according to  claim 87 , wherein said polishing liquid supply nozzle is moved such that said polishing liquid supply nozzle moves in at least one of a pivoting motion, a reciprocating motion, a rotational motion, and a linear motion. 
   
   
       89 . A method according to  claim 87 , wherein said polishing liquid supply nozzle has a plurality of polishing liquid supply ports. 
   
   
       90 . A method according to  claim 87 , wherein said polishing liquid supply nozzle extends in a radial direction of said polishing surface. 
   
   
       91 . A method according to  claim 87 , wherein said polishing liquid supply nozzle is inclined a predetermined angle to a radial direction of said polishing surface. 
   
   
       92 . A method according to  claim 84 , wherein said adjusting polishing liquid supply condition is carried out by controlling a rate of the polishing liquid supplied from said polishing liquid supply nozzle to said polishing surface. 
   
   
       93 . A method according to  claim 92 , wherein said polishing liquid supply nozzle has a plurality of polishing liquid supply ports and rates of the polishing liquid supplied from said polishing liquid supply ports to said polishing surface are individually controlled.