Coupling wire to semiconductor region

Abstract

A first device has a surface and includes a micrometer-scale or smaller geometry doped semiconductor region extending along the surface. A second device has a surface opposite the surface of the first device and includes a micrometer-scale or smaller wire extending through the second device to a position in proximity to the surface of the second device. The first and second devices are displaceable between first and second positions relative to each other. The wire is not substantially electrically coupled to the doped semiconductor region in the first position and the wire is substantially electrically coupled to the doped semiconductor region in the second position. A potential applied to the wire affects the conductivity of the doped semiconductor region in the second position.

1 - 31 . (canceled) 
   
   
       32 . A method of substantially electrically coupling a micrometer-scale or smaller geometry doped semiconductor region to a micrometer-scale or smaller geometry wire in a system wherein a first device has a surface and includes the doped semiconductor region extending along its surface, a second device has a surface opposite the surface of the first device and includes the wire extending through the second device to a position in proximity to the surface of the second device comprising:
 displacing the first and second devices relative to each other;   receiving a signal from a sensor indicating the relative position of wire and the doped semiconductor region; and   determining whether the wire and the doped semiconductor region are aligned in response to the signal from the sensor.   
   
   
       33 . The method according to  claim 32  comprising determining whether the wire and the doped semiconductor region are aligned by sensing current flow through the doped semiconductor region. 
   
   
       34 . The method according to  claim 32  comprising electrostatically displacing one of the first and second devices relative to the other device. 
   
   
       35 . The method according to  claim 32  comprising stopping the displacement of the one of the first and second devices if the wire and the doped semiconductor region are aligned and continuing the displacement if the wire and the doped semiconductor region are not aligned. 
   
   
       36 . The method according to  claim 32  comprising applying an attractive force between the first and second devices. 
   
   
       37 . The method according to  claim 32  comprising storing position information in a memory. 
   
   
       38 . A method of substantially electrically coupling a micrometer-scale or smaller geometry wire to one of a plurality of micrometer-scale or smaller geometry doped semiconductor regions in a system wherein a first device has a surface and includes the plurality of doped semiconductor regions extending along its surface, a second device has a surface opposite the surface of the first device and includes the wire extending through the second device to a position in proximity to the surface of the second device comprising:
 receiving a signal identifying one of the doped semiconductor regions;   reading position information from memory corresponding to the identified doped semiconductor region; and   displacing one of the first and second devices in response to the position information.   
   
   
       39 . The method according to  claim 38  comprising applying an attractive force between the first and second devices. 
   
   
       40 . The method according to  claim 38  comprising electrostatically displacing one of the first and second devices relative to the other device. 
   
   
       41 - 47 . (canceled) 
   
   
       48 . A method of activating one of a plurality of micrometer-scale or smaller geometry doped semiconductor regions along a surface of a first device comprising:
 receiving a command signal identifying the one of the plurality of doped semiconductor regions;   generating a control signal in response to the command signal;   actuating a second device relative to the first device in response to the control signal to align a conductor on the second device with the identified doped semiconductor region.   
   
   
       49 . The method according to  claim 48  comprising reading position information from a memory in response to the command signal and generating the control signal in response to the position information. 
   
   
       50 . The method according to  claim 48  comprising coupling the first and second devices. 
   
   
       51 - 52 . (canceled) 
   
   
       53 . The method of claim  31 , further comprising:
 in response to determining the wire and the doped semiconductor region are aligned, applying a force to at least one of the wire and the doped semiconductor region bringing the wire and the doped semiconductor region closer together to either connect the first and second devices or enhance coupling between the first and second devices.   
   
   
       54 . The method of  claim 53 , further comprising:
 bonding the first and second devices together.   
   
   
       55 . The method of claim  31  further comprising:
 in response to determining the first and second devices wire and the doped semiconductor region are not aligned, moving the wire and the doped semiconductor region in small increments until the wire and the doped semiconductor region are aligned; and   storing a position of the wire and the doped semiconductor region when the wire and the doped semiconductor region are aligned.   
   
   
       56 . The method of  claim 38 , further comprising:
 in response to determining the first and second devices are aligned, applying a force to at least one of the first and second devices bringing the first and second devices closer together to either connect or enhance coupling between the first and second devices.   
   
   
       57 . The method of  claim 56 , further comprising:
 bonding the first and second devices together.   
   
   
       58 . The method of  claim 48 , further comprising:
 in response to determining the conductor on the second device and the doped semiconductor region on the first device are aligned, applying a force to at least one of the first and second devices bringing the first and second devices closer together to either connect or enhance coupling between the first and second devices.   
   
   
       59 . The method of  claim 58 , further comprising:
 bonding the first and second devices together.