US2009159923A1PendingUtilityA1
Nitride semiconductor light emitting device, method of manufacturing nitride semiconductor light emitting device, and nitride semiconductor transistor device
Est. expiryMar 6, 2026(expired)· nominal 20-yr term from priority
H10D 62/8503H10D 30/475H10H 20/84H10D 30/4755H01S 5/028H01S 5/22B82Y 20/00H01S 5/34333
53
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Claims
Abstract
Provided are a nitride semiconductor light emitting device including a coat film formed at a light emitting portion and including an aluminum nitride crystal or an aluminum oxynitride crystal, and a method of manufacturing the nitride semiconductor light emitting device. Also provided is a nitride semiconductor transistor device including a nitride semiconductor layer and a gate insulating film which is in contact with the nitride semiconductor layer and includes an aluminium nitride crystal or an aluminum oxynitride crystal.
Claims
exact text as granted — not AI-modified1 - 17 . (canceled)
18 . A nitride semiconductor light emitting device including a coat film formed at a light emitting portion, wherein said coat film is crystallized and an amorphous film is formed on said coat film.
19 . The nitride semiconductor light emitting device according to claim 18 , wherein said coat film has a crystal axis aligned with a nitride semiconductor crystal forming said light emitting portion.
20 . The nitride semiconductor light emitting device according to claim 18 , wherein said coat film includes an aluminum nitride crystal or an aluminum oxynitride crystal.
21 . The nitride semiconductor light emitting device according to claim 18 , wherein said amorphous film is a film made of an oxide.Cited by (0)
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