Producing method for crystalline thin film

Abstract

A method for producing a crystalline film by melting and resolidifying a film, characterized in preparing a film having a specific region and obtained either by (A) a step of forming a film in which a “specific region” and an “region continuous to a periphery of the specific region and different in thickness from the specific region” co-exist, or by (B) a step of irradiating a film with an electromagnetic wave or particles having a mass in mutually different conditions between a specific region and a peripheral region thereof, and melting and resolidifying at least a part of the film. As the spatial position of the specific region can be exactly and easily controlled, it is possible to obtain a crystalline film in which a crystal grain is formed in a desired position.

1 .- 31 . (canceled) 
   
   
       32 . An element utilizing a crystalline film obtained by the process of melting and resolidifying a film comprising the steps of:
 preparing a film having a specific amorphous region obtained by a step of forming a film in which a specific amorphous region and a peripheral amorphous region continuous to a periphery of the specific amorphous region co-exist, the film having a thickness larger in the specific amorphous region than in the peripheral amorphous region:   melting at least a part of the film so that a single crystal grain or a single cluster remains unmelted in the specific amorphous region; and   resolidifying the film so that crystal growth occurs in a direction from the specific amorphous region toward the peripheral amorphous region,   
     wherein a spatial position of at least a part of crystal grains having a continuous crystalline structure in the crystalline film is determined by a spatial position of the specific amorphous region, and a crystal grain having the determined spatial position is utilized as an active area, wherein the active area does not contain a crystal grain boundary. 
   
   
       33 . The element according to  claim 32 , wherein the active area is formed inside a single crystal grain of the crystalline film. 
   
   
       34 . A circuit including a plurality of the element according to  claim 32 , and a wiring between the elements. 
   
   
       35 .- 48 . (canceled)