US2009176328A1PendingUtilityA1

Semiconductor device and semiconductor device manufacturing method

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Assignee: MAKITA TSUYOSHIPriority: Apr 14, 2006Filed: Mar 12, 2009Published: Jul 9, 2009
Est. expiryApr 14, 2026(expired)· nominal 20-yr term from priority
Inventors:Tsuyoshi Makita
G02B 6/42
43
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Claims

Abstract

A semiconductor device is provided and includes a substrate, a photoelectric converting portion, a plurality of optical waveguide portions stacked above the photoelectric conversion portion, each of the plurality of optical waveguide portions including a translucent material and being shaped in a taper.

Claims

exact text as granted — not AI-modified
1 . A method of manufacturing a semiconductor device comprising a substrate and a photoelectric converting portion, the method comprising stacking a plurality of layers above the photoelectric converting portion, the each of the plurality of layers comprising a wiring portion, an interlayer insulating film, and a tapered optical waveguide portion comprising a translucent material. 
   
   
       2 . The method of manufacturing a semiconductor device according to  claim 1 , wherein the tapered optical waveguide portion in each of the plurality of layers has a sectional area reducing gradually toward the substrate. 
   
   
       3 . The method of manufacturing a semiconductor device according to  claim 1 , wherein the optical waveguide portion in each of the plurality of layers is formed by: patterning and etching the interlayer insulating film to make an opening in the interlayer insulating film; and embedding the translucent material into the opening. 
   
   
       4 . The method of manufacturing a semiconductor device according to  claim 2 , wherein the optical waveguide portion in each of the plurality of layers is formed by: patterning and etching the interlayer insulating film to make an opening in the interlayer insulating film; and embedding the translucent material into the opening.

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