US2009181166A1PendingUtilityA1
Recording medium and method of making the same
Est. expirySep 30, 2023(expired)· nominal 20-yr term from priority
G11B 11/10584G11B 5/7375G11B 5/7369G11B 11/10586G11B 2005/0029G11B 2005/0021G11B 5/74G11B 5/7361G11B 5/672
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Claims
Abstract
A recording medium includes a substrate, a recording layer provided with perpendicular magnetic anisotropy for recording of information, a foundation layer disposed between the substrate and the recording layer, an initial layer which is greater in surface tension than the foundation layer and held in contact with a recoding-layer-side surface of the foundation layer, and a functional layer held in contact with a recoding-layer-side surface of the initial layer.
Claims
exact text as granted — not AI-modified1 . A method of making a recording medium, the method comprising:
forming a first foundation layer on a substrate; and forming an initial layer on the foundation layer by growing islands of a material which is greater in surface tension than the foundation layer; forming a functional layer on the initial layer; and forming a recording layer above the functional layer.
2 . The method according to claim 1 , further comprising:
forming a second foundation layer on the functional layer, the second foundation layer being smaller in surface tension than the functional layer; and forming a roughness controlling layer on the second foundation layer by growing islands of a material which is greater in surface tension than the second foundation layer; wherein the recording layer is formed on the roughness controlling layer.
3 . The method according to claim 1 , wherein the functional layer comprises one of a heat sink layer, a non-magnetic layer, a recording magnetic field reducing layer and a soft magnetic layer.
4 . The method according to claim 1 , wherein the functional layer is formed to have a thickness of no less than 20 nm.
5 . The method according to claim 1 ,
wherein the first foundation layer is made of a material selected from the group consisting of SiN, SiO 2 , YSiO 2 , ZnSiO 2 , AlO and AlN; and wherein the initial layer is made of a material selected from the group consisting of Pt, Au, Pd, Ru, Co and an alloy containing any one of these metal elements.
6 . The method according to claim 2 ,
wherein the first foundation layer is made of a material selected from the group consisting of SiN, SiO 2 , YSiO 2 , ZnSiO 2 , AlO and AlN; wherein the initial layer is made of a material selected from the group consisting of Pt, Au, Pd, Ru, Co and an alloy containing any one of these metal elements; wherein the second foundation later is made of a material selected from the group consisting of SiN, SiO 2 , YSiO 2 , ZnSiO 2 , AlO and AlN; and wherein the roughness controlling layer is made of a material selected from the group consisting of Pt, Au, Pd, Ru, Co and an alloy containing any one of these metal elements; and wherein the second foundation layer is spaced from the first foundation layer at least by as much as a combined thickness of the initial layer and the functional layer.Join the waitlist — get patent alerts
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