Etching process apparatus and member for etching process chamber

Abstract

It is an object of the present invention to provide an etching process apparatus which can suppress evolution of foreign matter to improve production yield. An etching process apparatus comprising: a vacuum container and a process chamber inside of the vacuum container, in which a sample set in the process chamber held in the vacuum container is etched by the use of plasma; a member held inside of the process chamber; and a coating film which is formed by spray-coating a given material and covers a surface of the member and is exposed to the plasma, wherein, in a surface thereof, pores therein are sealed by the use of a material same as the given material.

1 . An etching process apparatus comprising:
 a vacuum container and a process chamber inside of the vacuum container, in which a sample set in the process chamber held in the vacuum container is etched by the use of plasma;   a member held inside of the process chamber; and   a coating film which is formed by spray-coating a given material and covers a surface of the member and is exposed to the plasma, wherein, in a surface thereof, pores therein are sealed by the use of a material same as the given material.   
   
   
       2 . The etching process apparatus according to  claim 1 , wherein the coating film is formed by spraying the given material and then treated to melt the surface to seal the pores. 
   
   
       3 . The etching process apparatus according to  claim 1 , wherein the coating film is formed by spraying the given material and then coated with the same material as that for the coating film by the sol-gel process to seal the pores. 
   
   
       4 . The etching process apparatus according to  claim 3 , wherein the coating film coated with the same material as that for the coating film is heated at 400 to 500° C. to seal the pores. 
   
   
       5 . The etching process apparatus according to one of  claims 1  to  4 , wherein the material for the coating film is composed of at least one species selected from the group consisting of Al 2 O 3 , YAG, Y 2 O 3 , Gd 2 O 3 , Yb 2 O 3  and YF 3 . 
   
   
       6 . The etching process apparatus according to  claim 2 , wherein the coating film formed by spraying the given material is heated by a flame, or irradiated with arc, laser beams or electron beams, or a combination thereof, to melt the surface and seal the pores. 
   
   
       7 . An internal member for an etching process chamber in which a sample set in a process chamber held in a vacuum container is etched by the use of plasma, wherein the internal member comprises a coating film which is formed by spray-coating a given material and covers a surface of the member and is exposed to the plasma, wherein, in a surface thereof, pores therein are sealed by the use of a material same as the given material. 
   
   
       8 . The internal member for an etching process chamber according to  claim 7 , wherein the coating film is formed by spraying and then treated to melt the surface to seal the pores. 
   
   
       9 . The internal member for an etching process chamber according to  claim 7 , wherein the coating film is formed by spraying and then coated with the same material as that for the coating film by the sol-gel process to seal the pores. 
   
   
       10 . The internal member for an etching process chamber according to  claim 9 , wherein the coating film coated with the same material as that for the coating film is heated at 400 to 500° C. to seal the pores.