Precursor composition, method for manufacturing precursor composition, method for manufacturing ferroelectric film, piezoelectric element, semiconductor device, piezoelectric actuator, ink jet recording head, and ink jet printer

Abstract

To provide precursor compositions for forming ferroelectric, methods for manufacturing precursor compositions, and methods for forming ferroelectric films using precursor compositions, which have excellent composition controllability in a liquid phase method, and in which metal compositions such as lead can be reused. A precursor composition pertains to a precursor composition including a precursor for forming a ferroelectric, wherein the ferroelectric is expressed by a general formula of AB 1-x C x O 3 , where an element A is composed of at least Pb, an element B is composed of at least one of Zr, Ti, V, W and Hf, an element C is composed of at least one of Nb and Ta, and the precursor includes at least the element B and the element C, and has an ester-bond in a part thereof.

1 . A precursor composition comprising a precursor for forming a ferroelectric, the precursor composition wherein
 the ferroelectric is expressed by a general formula of AB 1-x C x O 3 , where   an element A is composed of at least Pb,   an element B is composed of at least one of Zr, Ti, V, W and Hf,   an element C is composed of at least one of Nb and Ta, and   the precursor includes at least the element B and the element C, and has an ester-bond in a part thereof.   
     
     
         2 . A precursor composition according to  claim 1 , wherein
 the element B is Zr and Ti, and   the element C is Nb.   
     
     
         3 . A precursor composition according to  claim 1 , wherein the precursor further includes the element A. 
     
     
         4 . A precursor composition according to  claim 1 , wherein the precursor is dissolved or dispersed in an organic solvent. 
     
     
         5 . A precursor composition according to  claim 4 , wherein the organic solvent is alcohol. 
     
     
         6 . A precursor composition according to  claim 1 , wherein the ferroelectric includes Nb in a range of 0.05≦x<1. 
     
     
         7 . A precursor composition according to  claim 6 , wherein the ferroelectric includes Nb in a range of 0.1≦x≦0.3. 
     
     
         8 . A precursor composition according to  claim 1 , wherein the ferroelectric includes Ta in a range of 0.05≦x<1. 
     
     
         9 . A precursor composition according to  claim 1 , wherein the ferroelectric further includes Si or Si and Ge by 0.5 mol % or more. 
     
     
         10 . A precursor composition according to  claim 9 , wherein the ferroelectric includes Si or Si and Ge by 0.5-5 mol %.