Transistor element, display device and these manufacturing methods

Abstract

A transistor element that a transistor using an organic semiconductor layer on a substrate, an insulating film between layers contacting the organic semiconductor layer and an upper electrode electrically contacting the transistor via a through hole provided in the insulating film between layers are layered, wherein the insulating film between layers comprises a mixture of organic materials and particles.

1 . A transistor element that a transistor using an organic semiconductor layer on a substrate, an insulating film between layers contacting the organic semiconductor layer and an upper electrode electrically contacting the transistor via a through hole provided in the insulating film between layers are layered,
 wherein the insulating film between layers comprises a mixture of organic materials and particles.   
   
   
       2 . The transistor element as claimed in  claim 1 ,
 wherein a particle diameter of the particles which comprise the insulating film between layers is not more than ½ of a thickness of the insulating film between layers.   
   
   
       3 . The transistor element as claimed in  claim 1 ,
 wherein a partial ratio of volume of the organic materials to volume of the insulating film between layers is 30% or above.   
   
   
       4 . The transistor element as claimed in  claim 1 ,
 wherein the thickness of the insulating film between layers is 2 μm or above and not more than 40 μm.   
   
   
       5 . The transistor element as claimed in  claim 1 ,
 wherein a capacitance ratio per unit area of a gate insulating film compared to a capacitance per unit area of the insulating film between layers is 3 or above.   
   
   
       6 . The transistor element as claimed in  claim 1 ,
 wherein the upper electrode is placed in a position not covering a channel forming part of the organic semiconductor layer as viewed in plan view.   
   
   
       7 . The transistor element as claimed in  claim 1 ,
 wherein the mixture of organic materials and particles comprising the insulating film between layers includes a color ingredient of light absorbency.   
   
   
       8 . A display device in which the transistor element as claimed in  claim 1  is used as a switching element corresponding to an image display element. 
   
   
       9 . A display device, in which an image display element is layered corresponding to one of the transistor elements on an active matrix providing plural of the transistor elements as claimed in  claim 1  in lattice shape. 
   
   
       10 . The display device as claimed in  claim 9 ,
 wherein the image display element is selected from a group comprising a liquid crystal element, an electrophoretic display element and an organic electro luminescence element.   
   
   
       11 . A manufacturing method of a transistor element that a transistor using an organic semiconductor layer on a substrate, an insulating film between layers contacting the organic semiconductor layer and an upper electrode electrically contacting the transistor via a through hole provided in the insulating film between layers are layered,
 wherein the insulating film between layers comprising a mixture of organic materials and particles is formed by a screen print method.   
   
   
       12 . The manufacturing method of the transistor element as claimed in  claim 11 , wherein a particle diameter of the particles which comprise the insulating film between layers is not more than ½ of the thickness of the insulating film between layers. 
   
   
       13 . The manufacturing method of the transistor element as claimed in  claim 11 ,
 wherein a partial ratio of volume of the organic materials to volume of the insulating film between layers is 30% or above.   
   
   
       14 . The manufacturing method of the transistor element as claimed in  claim 11 ,
 wherein the thickness of the insulating film between layers is 2 μm or above and not more than 40 μm.   
   
   
       15 . The manufacturing method of the transistor element as claimed in  claim 11 ,
 wherein a capacitance ratio per unit area of a gate insulating film compared to a capacitance per unit area of the insulating film between layers is 3 or above.   
   
   
       16 . The manufacturing method of the transistor element as claimed in  claim 11 ,
 wherein the upper electrode is placed in a position not covering a channel forming part of the organic semiconductor layer as viewed in plan view.   
   
   
       17 . The manufacturing method of the transistor element as claimed in  claim 11 ,
 wherein the mixture of organic materials and particles comprising the insulating film between layers includes a color ingredient of light absorbency.