US2009189281A1PendingUtilityA1

semiconductor package and a method for manufacturing the same

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Assignee: HAN KWON WHANPriority: Jun 20, 2007Filed: Apr 3, 2009Published: Jul 30, 2009
Est. expiryJun 20, 2027(~0.9 yrs left)· nominal 20-yr term from priority
Inventors:Kwon Whan Han
H10W 74/00H10W 72/59H10W 74/129H10W 72/90H10W 20/427H10W 70/60H10W 20/49H10W 72/00
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Claims

Abstract

A semiconductor package and a method for manufacturing the same capable of supplying power easily without an increase in the number of pads for power supply. The semiconductor package includes a semiconductor chip having a plurality of pads including pads for power supply disposed in a center portion and an internal wiring disposed to be exposed to outside; an insulating film formed on the semiconductor to expose the pads for power supply and the internal wirings; and re-distribution lines formed on the insulating film to connect between the exposed portions of the pads for power supply and the internal wiring.

Claims

exact text as granted — not AI-modified
1 . A semiconductor package comprising:
 a semiconductor chip having a plurality of pads including pads for power supply disposed in a center portion and an internal wiring exposed to the outside of the semiconductor chip;   an insulating film formed on the semiconductor chip to expose the pads for power supply and the internal wirings; and   re-distribution lines formed on the insulating film to connect the exposed portions of the pads for power supply and the exposed internal wiring.   
   
   
       2 . The semiconductor package according to  claim 1 , wherein the number of the pads for power supply is at least two and the exposed internal wirings is at least one. 
   
   
       3 . The semiconductor package according to  claim 2 , wherein the exposed internal wirings and the re-distribution lines of at least one are all connected with each other. 
   
   
       4 . The semiconductor package according to  claim 1 , wherein the re-distribution line is composed of a metal film. 
   
   
       5 . The semiconductor package according to  claim 4 , wherein the metal film is formed with a film of Au or any one alloy film of Cu/Ni/Au, Cu/Au and Ni/Au with Au formed thereon. 
   
   
       6 . The semiconductor package according to  claim 1 , further comprising a capping film formed on the insulating film to expose one portion of the re-distribution line and to expose the pads for power supply.

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