US2009189642A1PendingUtilityA1

Nanowire Crossbar Implementations of logic Gates using configurable, tunneling resistor junctions

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Assignee: SNIDER GREGORY SPriority: Oct 28, 2005Filed: Mar 12, 2009Published: Jul 30, 2009
Est. expiryOct 28, 2025(expired)· nominal 20-yr term from priority
Y10S977/762Y10S977/932Y10S977/94H03K 19/20H10D 84/206
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Abstract

Various embodiments of the present invention are directed to nanowire crossbars that use configurable, tunneling resistor junctions to electronically implement logic gates. In one embodiment of the present invention, a method for implementing a logic gate comprises: providing a first layer of approximately parallel nanowires; interconnecting the first layer of approximately parallel nanowires with a second layer of approximately parallel nanowires through configurable, tunneling resistor junctions; selecting nanowires from among the first and second layer of nanowires to carry input and output electrical signals representing logical values; applying electrical signals representing input logical values to the input nanowires; and detecting an electrical signal representing an output logical value on the output nanowires.

Claims

exact text as granted — not AI-modified
1 . A method for implementing a logic gate, the method comprising:
 providing a first layer of approximately parallel nanowires;   interconnecting the first layer of approximately parallel nanowires with a second layer of approximately parallel nanowires through configurable, tunneling resistor junctions;   selecting nanowires from among the first and second layer of nanowires to carry input and output electrical signals representing logical values;   applying electrical signals representing input logical values to the input nanowires; and   detecting an electrical signal representing an output logical value on the output nanowires.   
   
   
       2 . The method of  claim 1  further comprising selecting nanowires from among the first layer of nanowires that carry pull-up voltages. 
   
   
       3 . The method of  claim 1  further comprising selecting nanowires from among the second layer of nanowires that carry pull-down voltages. 
   
   
       4 . The method of  claim 1  wherein the electrical signals further comprises voltage signals. 
   
   
       5 . The method of  claim 1  wherein the electrical signals further comprises current signals. 
   
   
       6 . The method of  claim 1  wherein the electrical signals are weak or strong electrical signals.

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