US2009194163A1PendingUtilityA1

Method to form a photovoltaic cell comprising a thin lamina

Assignee: TWIN CREEKS TECHNOLOGIES INCPriority: Feb 5, 2008Filed: Sep 10, 2008Published: Aug 6, 2009
Est. expiryFeb 5, 2028(~1.5 yrs left)· nominal 20-yr term from priority
H10F 71/139H10F 71/121H10F 10/166H10F 10/146H10F 71/1395H10F 71/1276H10F 71/1257H10F 71/1218H10F 71/1212H10F 10/165H10F 10/11H10F 77/1662H10F 77/1642H10F 77/1645H10F 77/211Y02E10/544Y02E10/545Y02E10/546Y02P70/50Y02E10/547Y02E10/548
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Claims

Abstract

A very thin photovoltaic cell is formed by implanting gas ions below the surface of a donor body such as a semiconductor wafer. Ion implantation defines a cleave plane, and a subsequent step exfoliates a thin lamina from the wafer at the cleave plane. A photovoltaic cell, or all or a portion of the base or emitter of a photovoltaic cell, is formed within the lamina. In preferred embodiments, the wafer is affixed to a receiver before the cleaving step. Electrical contact can be formed to both surfaces of the lamina, or to one surface only.

Claims

exact text as granted — not AI-modified
1 . A photovoltaic module comprising:
 a receiver; and   a plurality of semiconductor laminae bonded to the receiver, wherein each semiconductor lamina is between about 1 and about 100 microns thick, wherein each semiconductor lamina comprises at least a portion of a base, or of an emitter, of a photovoltaic cell.   
     
     
         2 . The photovoltaic module of  claim 1  wherein each semiconductor lamina is between about 1 and about 20 microns thick. 
     
     
         3 . The photovoltaic module of  claim 2  wherein each semiconductor lamina is between about 1 and about 5 microns thick 
     
     
         4 . The photovoltaic module of  claim 1  wherein each semiconductor lamina is monocrystalline silicon. 
     
     
         5 . The photovoltaic module of  claim 1  wherein each semiconductor lamina is polycrystalline or multicrystalline semiconductor material. 
     
     
         6 . The photovoltaic module of  claim 1  wherein the plurality of semiconductor laminae comprises at least 12 laminae. 
     
     
         7 . The photovoltaic module of  claim 1  wherein the plurality of semiconductor laminae comprises at least 36 laminae. 
     
     
         8 . The photovoltaic module of  claim 1  wherein the receiver is a substrate. 
     
     
         9 . The photovoltaic module of  claim 1  wherein the receiver is a superstrate. 
     
     
         10 . The photovoltaic module of  claim 1  wherein each semiconductor lamina comprises a base of a photovoltaic cell. 
     
     
         11 . The photovoltaic module of  claim 1  wherein each semiconductor lamina comprises a base and an emitter of a photovoltaic cell. 
     
     
         12 . The photovoltaic module of  claim 11  wherein each semiconductor lamina consists essentially of monocrystalline silicon. 
     
     
         13 . The photovoltaic module of  claim 11  wherein each semiconductor lamina is less than about 5 microns thick. 
     
     
         14 . The photovoltaic module of  claim 1  wherein the receiver comprises glass. 
     
     
         15 . The photovoltaic module of  claim 1  wherein the receiver comprises metal. 
     
     
         16 . The photovoltaic module of  claim 1  wherein the receiver comprises a polymer.

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