Organometallic precursor compounds

Abstract

This invention relates to organometallic precursor compounds represented by the formula (L)M(L′) 2 (NO) wherein M is a Group 6 metal, L is a substituted or unsubstituted anionic ligand and L′ is the same or different and is a π acceptor ligand, a process for producing the organometallic precursor compounds, and a method for producing a film, coating or powder from the organometallic precursor compounds.

1 - 41 . (canceled) 
   
   
       42 . A method for producing a film, coating or powder by decomposing an organometallic precursor compound represented by the formula (L)M(L′) 2 (NO) wherein M is a Group 6 metal, L is a substituted or unsubstituted cyclopentadienyl ligand, L′ is the same or different and is a π acceptor ligand, thereby producing the film, coating or powder. 
   
   
       43 . The method of  claim 42 , where the organometallic precursor compound is represented by the formula (RL)M(L′) 2 (NO) wherein M is a Group 6 metal, L is a substituted cyclopentadienyl ligand, R is an alkyl having from 1 to 8 carbons atoms or SiMe 3 ; L′ is the same or different and is a π acceptor ligand, thereby producing the film, coating or powder. 
   
   
       44 . The method of  claim 42 , wherein M is selected from molybdenum, chromium or tungsten. 
   
   
       45 . The method of  claim 42  wherein the decomposing of said organometallic precursor compound is thermal, chemical, photochemical or plasma-activated. 
   
   
       46 . The method of claim of  claim 42 , wherein said organometallic precursor compound is evaporated and the vapor is directed into a deposition reactor housing a substrate. 
   
   
       47 . The method of  claim 45  wherein said substrate is comprised of a material selected from the group consisting of a metal, a metal silicide, a semiconductor, an insulator and a barrier material. 
   
   
       48 . The method of  claim 46  wherein said substrate is a patterned wafer. 
   
   
       49 . The method of  claim 42  wherein said film, coating or powder is produced by a gas phase deposition.