Memory storage device with heating element

Abstract

A memory storage device is provided that includes a storage cell having a changeable magnetic region. The changeable magnetic region includes a material having a magnetization state that is responsive to a change in temperature. The memory storage device also includes a heating element. The heating element is proximate to the storage cell for selectively changing the temperature of the changeable magnetic region of said storage cell. By heating the storage cell via the heating element, as opposed to heating the storage cell by directly applying current thereto, more flexibility is provided in the manufacture of the storage cells.

1 - 20 . (canceled) 
   
   
       21 . A method of writing to a magnetic memory element, the method comprising: heating the memory element to a temperature to no more than about 50 degree C. within the Blocking temperature of the memory element; and applying at least one magnetic field to the memory element. 
   
   
       22 . An information storage device comprising: an array of magnetic memory elements; and a plurality of heating elements for the memory elements, the heating elements raising the temperature of selected memory elements by no more than about 50 degree C. within the Blocking temperature during write operations. 
   
   
       23 . A method of writing to a magnetic memory element, the method comprising: heating the memory element to a temperature to no more than a value within the Blocking temperature of the memory element; applying at least one magnetic field to the memory element and said value being sufficient so that at least one magnetic region of the memory element remains pinned at the temperature the magnetic memory element is heated to and at the applied field. 
   
   
       24 . An information storage device comprising: an array of magnetic memory elements; and a plurality of heating elements for the memory elements, the heating elements raising the temperature of selected memory elements by no more than a value within the Blocking temperature during write operations, said value being sufficient so that at least one magnetic region of the memory element remains pinned at the temperature the magnetic memory element is heated to and at the applied field.