Methods for Electrochemically Fabricating Structures Using Adhered Masks, Incorporating Dielectric Sheets, and/or Seed Layers That Are Partially Removed Via Planarization

Abstract

Embodiments of the present invention provide mesoscale or microscale three-dimensional structures (e.g. components, device, and the like). Embodiments relate to one or more of (1) the formation of such structures which incorporate sheets of dielectric material and/or wherein seed layer material used to allow electrodeposition over dielectric material is removed via planarization operations; (2) the formation of such structures wherein masks used for at least some selective patterning operations are obtained through transfer plating of masking material to a surface of a substrate or previously formed layer, and/or (3) the formation of such structures wherein masks used for forming at least portions of some layers are patterned on the build surface directly from data representing the mask configuration, e.g. in some embodiments mask patterning is achieved by selectively dispensing material via a computer controlled inkjet nozzle or array or via a computer controlled extrusion device.

1 . A process for forming a multilayer three-dimensional structure, comprising:
 (a) forming and adhering a layer of material to a substrate, wherein the substrate may include previously formed layers; and   (b) repeating the forming and adhering operation of (a) a plurality of times to build up a three-dimensional structure from a plurality of adhered layers;   wherein the formation of at least one layer comprises:
 (i) forming a desired pattern of dielectric material on the substrate or on previously deposited material wherein the patterning of the dielectric results in at least one void in the dielectric material that exposes a portion of the substrate or previously deposited material; 
 (ii) applying a seed layer material to the dielectric material; 
 (iii) depositing a conductive material into the at least one void in the dielectric; and 
 (iv) after depositing the conductive material, removing at least a portion of the seed layer material located on the dielectric material. 
   
   
   
       2 . The process of  claim 1  wherein operations (i)-(iv) are performed during the formation of a plurality of layers. 
   
   
       3 . The process of  claim 1  wherein the removing of the seed layer material comprises a planarization operation. 
   
   
       4 . The process of  claim 1  wherein the removing of the seed layer material comprises an etching operation. 
   
   
       5 . The process of  claim 1  wherein the forming a desired pattern of dielectric comprises the deposition of a liquid dielectric over the substrate or previously formed layer, followed by the subsequent solidification and patterning of the dielectric material. 
   
   
       6 . The process of  claim 1  wherein the forming of a desired pattern of dielectric comprises the adhesion of a sheet of dielectric material to the substrate or previously formed layer, followed by the subsequent patterning of the dielectric material. 
   
   
       7 . The process of  claim 1  wherein the dielectric material comprises a photoresist material. 
   
   
       8 . The process of  claim 1  additionally comprising:
 (v) removing at least a portion of the dielectric material to create at least a second void; and   (vi) then depositing a selected material into the second void.   
   
   
       9 . The process of  claim 1  additionally comprising:
 (v) selectively forming at least one second void in the dielectric material;   (vi) depositing a seed layer into the at least second void; and   (vii) depositing a second conductive material into the at least one second void.   
   
   
       10 . The process of  claim 1  additionally comprising:
 (v) depositing an adhesion layer material onto the dielectric material and onto the substrate or previously deposited material prior to applying the seed layer material.   
   
   
       11 . A process for forming a multilayer three-dimensional structure, comprising:
 (a) forming and adhering a layer of material to a substrate, wherein the substrate may include previously formed layers; and   (b) repeating the forming and adhering operation of (a) a plurality of times to build up a three-dimensional structure from a plurality of adhered layers;   wherein the formation of at least one layer comprises:
 (i) forming a desired pattern of a first material on the substrate or on previously deposited material; and thereafter applying a non-planar seed layer material which will be used as base onto which a second material will be subsequently electrodeposited. 
   
   
   
       12 . The process of  claim 11  wherein after deposition of the second material removing at least a portion of the deposited material and a portion of the non-planar seed layer while planarizing a surface of the first and second material. 
   
   
       13 . The process of  claim 12  wherein after planarizing, the first or second material is at least partially removed to create voids in preparation for deposition third material. 
   
   
       14 . The process of  claim 13  wherein a second seed layer material is deposited in the voids created in preparation for deposition of a third material and wherein the third material is a conductive material that is electrodeposited over the second seed layer material. 
   
   
       15 . The process of  claim 11  wherein one layer is formed using a first and second material and at least one other layer is formed using a third and fourth material, where at least one material used in forming the one layer and the one other layer is different. 
   
   
       16 . The process of  claim 11  wherein the first material is deposited and patterned by transfer plating or by selective deposition from an ink jet or extrusion dispenser. 
   
   
       17 . A process for forming a multilayer three-dimensional structure, comprising:
 (a) forming and adhering a layer of material to a substrate, wherein the substrate may include previously formed layers; and   (b) repeating the forming and adhering operation of (a) a plurality of times to build up a three-dimensional structure from a plurality of adhered layers;   wherein the formation of at least one layer comprises:
 (i) forming a pinking indentation in a first deposited material in preparation for depositing a seed layer material over the first deposited material, depositing a seed layer material over at least a portion of the first deposited material and into the pinking indentation, and thereafter depositing a second material onto the seed layer material. 
   
   
   
       18 . A process for forming a multilayer three-dimensional structure, comprising:
 (a) forming and adhering a layer of material to a substrate, wherein the substrate may include previously formed layers; and   (b) repeating the forming and adhering operation of (a) a plurality of times to build up a three-dimensional structure from a plurality of adhered layers;   wherein the formation of at least one layer comprises:
 (i) depositing and patterning a first material, where the patterning comprises at least a first patterned region and a second patterned region, where the first patterned region is defined by locations where one of a structural material or a sacrificial material is to be located and the second region is defined at least in part by at least one location where an indentation in a seed layer material will exist as an aid for fabricating the structure but not necessarily as a desired feature of the structure that is to be put to use; 
 (ii) depositing a seed layer material over the first material, depositing a seed layer material over at least a portion of the first deposited material and into the second region; and 
 (iii) thereafter depositing a second material onto the seed layer material. 
   
   
   
       19 . The process of  claim 18  wherein the second region does not define a feature of the structure that is to be put to use.