Method of manufacturing light emitting diode device

Abstract

A method of manufacturing light-emitting diode device has steps of isolating a light-emitting side of an LED chip from a wire-bonding region by disposing partition panels on the wire-bonding region and coating phosphors on the light-emitting side of the LED chip in a phosphor-coating process. The method can be applied to manufacturing LED device having a flip chip structure or a vertical chip structure. According to the method, a white LED device can be directly manufactured without adopting a phosphor package technique, and thereby a whole package process of the white LED device is simplified.

1 . A method of manufacturing light-emitting diode (LED) device comprising steps of:
 isolating an light-emitting side of an LED chip from a wire-bonding region by disposing partition panels on the wire-bonding region; and   coating phosphors on the light-emitting side of the LED chip during a phosphor-coating process.   
   
   
       2 . The method as claimed in  claim 1 , wherein the LED device is a high-power white LED device. 
   
   
       3 . The method as claimed in  claim 1 , wherein the LED device has a flip-chip structure or a vertical structure. 
   
   
       4 . The method as claimed in  claim 2 , wherein the LED device has a flip-chip structure or a vertical structure. 
   
   
       5 . A method of manufacturing light-emitting diode (LED) device having a flip-chip structure comprising steps of:
 mounting at least one flip-chip structure on a top of a base wherein a wire-bonding region is disposed on the top of the base and surrounding the at least one flip-chip structure, each of the at least one flip chip structure comprising
 a transparent substrate having a back surface; and 
 a transparent electrode layer being as a light-emitting side of the flip chip structure and being mounted on the back surface of the transparent substrate; 
   isolating the transparent electrode layer from the wire-bonding region by disposing a partition panel on the wire-bonding region;   coating a slurry of phosphors on the transparent electrode layer;   evaporating solvents of the slurry by heating to solidify the phosphors and thereby form a phosphor layer;   removing the partition panel; and   cutting the base into sections to form at least one single-unit LED devices having a flip-chip structure.   
   
   
       6 . The method as claimed in  claim 5 , wherein a roughened layer having a rough surface is disposed between the transparent electrode layer and the phosphor layer. 
   
   
       7 . The method as claimed in  claim 5 , wherein the LED device is a high-power white LED device. 
   
   
       8 . The method as claimed in  claim 6 , wherein the LED device is a high-power white LED device. 
   
   
       9 . A method of manufacturing light-emitting diode (LED) device having a flip-chip structure comprising steps of:
 mounting at least one flip chip structure on a top of a base wherein a metal joint layer is disposed between the at least one flip-chip structure and the top of the base, and a periphery part of the metal joint layer surrounds the at least one flip-chip structure, each of the at least one flip-chip structure comprising
 a reflective metal layer being opposite to the metal joint layer; and 
 a n-type semiconductor layer being as a light-emitting side; 
   disposing a partition panel on the periphery part of the metal joint layer to isolate the n-type semiconductor layer from the periphery part of the metal joint layer;   coating a slurry of phosphors on the n-type semiconductor layer;   evaporating solvents of the slurry by heating to solidify the phosphors and thereby form a phosphor layer;   removing the partition panel; and   cutting the base into sections to form at least one single-unit LED device having a flip-chip structure.   
   
   
       10 . The method as claimed in  claim 9 , wherein a roughened layer having a rough surface is disposed between the n-type semiconductor layer and the phosphor layer. 
   
   
       11 . The method as claimed in  claim 9 , wherein the LED device is a high-power white LED device. 
   
   
       12 . The method as claimed in  claim 10 , wherein the LED device is a high-power white LED device. 
   
   
       13 . A method of manufacturing light-emitting diode (LED) device having a vertical chip structure comprising steps of:
 mounting at least one vertical chip structure on a top of a base and each of the at least one vertical chip structure comprising a p side electrode, a p-type semiconductor layer, a light-emitting layer, a n-type semiconductor layer and a transparent electrode layer being sequentially disposed on the base, wherein the transparent electrode layer functions as a light-emitting side and a wire-bonding region is disposed on a part of the transparent electrode layer;   disposing a partition panel on the wire-bonding region to isolate the wire-bonding region from the rest of the transparent electrode layer;   coating a slurry of phosphors on the transparent electrode layer;   evaporating solvents of the slurry by heating to solidify the phosphors to form a phosphor layer;   removing the partition panel; and   cutting the base into sections to form at least one single-unit LED device having a vertical chip structure.   
   
   
       14 . The method as claimed in  claim 13 , wherein a roughened layer having a rough surface is disposed between the transparent electrode layer and the phosphor layer. 
   
   
       15 . The method as claimed in  claim 13 , wherein the LED device is a high-power white LED device. 
   
   
       16 . The method as claimed in  claim 14 , wherein the LED device is a high-power white LED device.