Semiconductor device production method and semiconductor production apparatus

Abstract

A semiconductor device production method of the present invention first collects data including an initial volume of plating solution, volume of replenished solution, number of wafers processed, value of current applied and volume of waste solution in a step of filling a metal plating film in a via hole or a trench formed in an insulating film on a semiconductor substrate. Then, a cumulative charge during the plating is calculated based on the obtained current value. Also, a total volume of plating solution is calculated. Furthermore, an amount of decomposition products of suppressors contained in the plating solution based on the calculated total volume of plating solution, the volume of waste solution and the calculated cumulative charge. The semiconductor substrate is plated only when the amount of decomposition products is equal to or smaller than a predetermined threshold.

1 . A semiconductor device production method having a step of filling a metal plating film in a via hole or a trench formed in an insulating film on a semiconductor substrate, the step of filling the metal plating film comprising the steps of:
 collecting data including an initial volume of plating solution, volume of replenished solution, number of wafers processed, value of current applied and volume of waste solution;   calculating a cumulative charge during the plating based on the value of current applied;   calculating a total volume of plating solution; and   calculating an amount of decomposition products of suppressors contained in the plating solution based on the calculated total volume of plating solution, the volume of waste solution and the calculated cumulative charge.   
   
   
       2 . The semiconductor device production method according to  claim 1 , further comprising the steps of:
 discharging a predetermined volume of plating solution when the amount of decomposition products exceeds a predetermined value; and   replenishing plating solution.   
   
   
       3 . A semiconductor production apparatus for filling a metal plating film in a via hole or a trench formed in an insulating film on a semiconductor substrate, comprising:
 a unit circulating plating solution;   a unit replenishing plating solution;   a unit discharging the plating solution;   a unit collecting data including an initial volume of plating solution, volume of replenished solution, number of wafers processed, value of current applied and volume of waste solution;   a unit calculating a cumulative charge during the plating based on the value of current applied;   a unit calculating a total volume of plating solution; and   a unit calculating an amount of decomposition products of suppressors contained in the plating solution based on the calculated total volume of plating solution, the volume of waste solution and the calculated cumulative charge.   
   
   
       4 . The semiconductor production apparatus according to  claim 3 , wherein the unit discharging the plating solution discharges a predetermined volume of plating solution when the amount of decomposition products exceeds a predetermined value.